TE
tmCH
T436416A
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
VIN,VOUT
VDD,VDDQ
Value
-1.0 to 4.6
-1.0 to 4.6
50
Unit
V
Voltage on Any Pin Relative To Vss
Supply Voltage Relative To Vss
Short circuit Output Current
Power Dissipation
V
I
mA
W
out
PD
1
Operating Temperature
Storage Temperature
T
0 to +70
-55 to +125
°C
°C
OPR
T
stg
Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
(TA = 0 to +70°C, Voltage referenced to VSS=0V)
Parameter
Symbol
VDD,VDDQ
VIH
Min.
3.0
2.0
-0.3
2.4
-
Typ
Max.
Unit
V
Notes
Supply Voltage
3.3
3.6
Input High Voltage
Input Low Voltage
3.0
VDD+0.3V
V
1
VIL
0
-
0.8
-
V
2
Output logic high voltage
Output logic low voltage
Input leakage current
Output leakage current
VOH
V
IOH=-2mA
VOL
-
0.4
5
V
IOL=2mA
IIL
-5
-
uA
uA
3
4
IOL
-5
-
5
Note : 1. VIH (max) = 4.6V AC for pulse width 10ns acceptable.
≤
2. VIL (min) = -1.0V AC for pulse width 10ns acceptable.
≤
3. Any input 0V VIN VDD+ 0.3V , all other pin are not under test = 0V.
≤
≤
4. Dout = disable, 0V VOUT VDD .
≤
≤
CAPACITANCE
(TA =25 C,VDD=3.3V, f = 1MHz)
°
Pin
CLOCK
Symbol
CCLK
CADD
COUT
CIN
Min
2.5
2.5
4.0
2.5
Max
4.0
Unit
pF
ADDRESS
5.0
pF
DQ0 ~ DQ15
6.5
pF
RAS,CAS,WE,CS,CKE,LDQM,
UDQM
5.0
pF
TM Technology Inc. reserves the right
to change products or specifications without notice.
P. 4
Publication Date: MAY. 2003
Revision: B
TMT [ TAIWAN MEMORY TECHNOLOGY ]
