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UCC27525 参数 Datasheet PDF下载

UCC27525图片预览
型号: UCC27525
PDF下载: 下载PDF文件 查看货源
内容描述: 双5 -A高速低侧栅极驱动器 [Dual 5-A High-Speed Low-Side Gate Driver]
分类和应用: 驱动器栅极栅极驱动
文件页数/大小: 40 页 / 1728 K
品牌: TI [ TEXAS INSTRUMENTS ]
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UCC27523, UCC27524, UCC27525, UCC27526  
www.ti.com  
SLUSAQ3E NOVEMBER 2011REVISED JUNE 2012  
VDD and Under Voltage Lockout  
The UCC2752x devices have internal under voltage lockout (UVLO) protection feature on the VDD pin supply  
circuit blocks. When VDD is rising and the level is still below UVLO threshold, this circuit holds the output LOW,  
regardless of the status of the inputs. The UVLO is typically 4.25 V with 350-mV typical hysteresis. This  
hysteresis helps prevent chatter when low VDD supply voltages have noise from the power supply and also  
when there are droops in the VDD bias voltage when the system commences switching and there is a sudden  
increase in IDD. The capability to operate at low voltage levels such as below 5 V, along with best in class  
switching characteristics, is especially suited for driving emerging GaN power semiconductor devices.  
For example, at power-up, the UCC2752x driver-device output remains LOW until the VDD voltage reaches the  
UVLO threshold if Enable pin is active or floating. The magnitude of the OUT signal rises with VDD until steady-  
state VDD is reached. The non-inverting operation in Figure 30 shows that the output remains LOW until the  
UVLO threshold is reached, and then the output is in-phase with the input. The inverting operation in Figure 31  
shows that the output remains LOW until the UVLO threshold is reached, and then the output is out-phase with  
the input. With UCC27526 the output turns to high state only if INX+ is high and INX- is low after the UVLO  
threshold is reached.  
Since the device draws current from the VDD pin to bias all internal circuits, for the best high-speed circuit  
performance, two VDD bypass capacitors are recommended to prevent noise problems. The use of surface  
mount components is highly recommended. A 0.1-μF ceramic capacitor should be located as close as possible to  
the VDD to GND pins of the gate-driver device. In addition, a larger capacitor (such as 1-μF) with relatively low  
ESR should be connected in parallel and close proximity, in order to help deliver the high-current peaks required  
by the load. The parallel combination of capacitors should present a low impedance characteristic for the  
expected current levels and switching frequencies in the application.  
VDD Threshold  
VDD Threshold  
VDD  
EN  
VDD  
EN  
IN  
IN  
OUT  
OUT  
UDG-11229  
UDG-11228  
Figure 30. Power-Up Non-Inverting Driver  
Operating Supply Current  
Figure 31. Power-Up Inverting Driver  
The UCC2752x products feature very low quiescent IDD currents. The typical operating supply current in Under  
Voltage Lock-Out (UVLO) state and fully-on state (under static and switching conditions) are summarized in  
Figure 10, Figure 11 and Figure 12. The IDD current when the device is fully on and outputs are in a static state  
(DC high or DC low, refer Figure 11) represents lowest quiescent IDD current when all the internal logic circuits of  
the device are fully operational. The total supply current is the sum of the quiescent IDD current, the average IOUT  
current due to switching and finally any current related to pull-up resistors on the enable pins and inverting input  
pins. For example when the inverting Input pins are pulled low additional current is drawn from VDD supply  
through the pull-up resistors (refer to Figure 6 though Figure 9). Knowing the operating frequency (fSW) and the  
MOSFET gate (QG) charge at the drive voltage being used, the average IOUT current can be calculated as  
product of QG and fSW  
.
A complete characterization of the IDD current as a function of switching frequency at different VDD bias voltages  
under 1.8-nF switching load in both channels is provided in Figure 22. The strikingly linear variation and close  
correlation with theoretical value of average IOUT indicates negligible shoot-through inside the gate-driver device  
attesting to its high-speed characteristics.  
Copyright © 2011–2012, Texas Instruments Incorporated  
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Product Folder Link(s): UCC27523, UCC27524, UCC27525, UCC27526  
 
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