UCC27323, UCC27324, UCC27325
UCC37323, UCC37324, UCC37325
www.ti.com
SLUS492H –JUNE 2001–REVISED MAY 2013
ABSOLUTE MAXIMUM RATINGS(1)(2)
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
UNIT
Analog input voltage (INA, INB)
–0.3 to VDD + 0.3 V
not to exceed 16
V
Output body diode DC current (OUTA, OUTB)
0.2
0.2
4.5
IOUT_DC
Output current (OUTA, OUTB)
DC
A
IOUT_PULSE
D
Pulsed (0.5 µs)
Power dissipation at TA = 25°C
D package
1.14
2.12
780
16
W
DGN package
P package
mW
V
Output voltage (OUTA, OUTB)
Supply voltage
VDD
TJ
–0.3
–55
–65
16
V
Junction operating temperature
Storage temperature
150
150
300
Tstg
°C
Lead temperature (soldering, 10 sec.)
(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating
conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) All voltages are with respect to GND. Currents are positive into, negative out of the specified terminal.
ELECTRICAL CHARACTERISTICS
VDD = 4.5 to 15 V, TA = TJ (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
2
TYP
MAX UNIT
INPUT (INA, INB)
VIN_H
VIN_L
Logic 1 input threshold
Logic 0 input threshold
Input current
V
1
0 V ← VIN ← VDD
–10
10
µA
OUTPUT (OUTA, OUTB)
Output current
VDD = 14 V(1)
4
300
22
V
VOH
VOL
High-level output voltage
VOH = VDD – VOUT, IOUT = –10 mA
IOUT = 10 mA
TA = 25°C, IOUT = –10 mA, VDD = 14 V(2)
TA = full range, IOUT = –10 mA, VDD = 14 V(2)
TA = 25°C, IOUT = 10 mA, VDD = 14 V(2)
TA = full range, IOUT = 10 mA, VDD = 14 V(2)
450
45
35
42
2.5
4
mV
Low-level output level
Output resistance high
25
18
30
Ω
Output resistance low
1.9
1.2
500
2.2
Latch-up protection
mA
(1) The pullup and pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The pulsed output current rating is the
combined current from the bipolar and MOSFET transistors.
(2) The pullup and pulldown circuits of the driver are bipolar and MOSFET transistors in parallel. The output resistance is the RDS(ON) of the
MOSFET transistor when the voltage on the driver output is less than the saturation voltage of the bipolar transistor.
Copyright © 2001–2013, Texas Instruments Incorporated
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