SLUS329B − JUNE 1998 − REVISED FEBRUARY 2005
UC1854B
UC2854A, UC2854B
UC3854A, UC3854B
PACKAGE DESCRIPTION
J, N and DW PACKAGES
(TOP VIEW)
Q PACKAGE
(TOP VIEW)
GND
PKLMT
CAO
ISENSE
MOUT
IAC
VAO
VRMS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GTDRV
VCC
CT
SS
RSET
VSENSE
ENA
VREF
PKLMT
GND
N/C
GTDRV
VCC
3
ISENSE
CAOUT
N/C
MOUT
IAC
5
4
6
7
8
2 1 20 19
18
17
16
15
14
9 10 11 12 13
CT
SS
N/C
RSET
VSENSE
N/C − No connection
ORDERING INFORMATION
TA
UVLO
TURN-ON
(V)
16
−55°C to 125°C
−40°C to 85°C
0°C to 70°C
10.5
16
10.5
16
UVLO
TURN-OFF
(V)
10
10
10
10
10
PART NUMBERS
CDIP−16
(J)
−
UC1854BJ
UC2854AJ
UC2854BJ
−
PDIP−16
(N)
−
−
UC2854AN
UC2854BN
UC3854AN
SOIC−16
(DW)
−
−
UC2854ADW
UC2854BDW
UC3854ADW
PLCC−20
(Q)
−
−
UC2854AQ
UC2854BQ
−
10.5
10
−
UC3854BN
UC3854BDW
−
(1) The DW and Q packages are available taped and reeled. Add TR suffix to device type (e.g. UC2854ADWTR) to order quantities of 2,000
devices per reel for the DW package and 1,000 devices per reel for the Q package.
THERMAL RESISTANCE
PACKAGED DEVICES
RESISTANCES
θ
JC (°C/W)
θ
JA (°C/W)
CDIP−16
(J)
28(2)
80−120
PDIP−16
(N)
45
90(3)
SOP−16
(DW)
27
50−130(3)
PLCC−20
(Q)
34
43−75(3)
(2)
θ
JC data values stated are derived from MIL-STD-1835B which states “the baseline values shown are worst case (mean +2s) for a 60
×
60
mil microcircuit device silicon die and applicable for devices with die sizes up to 14,400 square mils. For device die sizes greater than
14,400 square mils use the following values, dual-in-line, 11°C/W; flat pack and pin grid array, 10°C/W.
(3)
θ
JA (junction-to-ambient) applies to devices mounted to five square inch FR4 PC board with one ounce copper where noted. When
resitance range is given, lower values are for five square inch aluminum PC board. Test PWB is 0.062 inches thick and typically uses
0.635 mm trace widths for power packages and 1.3 mm trace widths for non-power packages with a 100
×
100 mil probe land are at the
end of each trace.
VAO
VRMS
NC
VREF
ENA
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