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TPS73225DCQRG4 参数 Datasheet PDF下载

TPS73225DCQRG4图片预览
型号: TPS73225DCQRG4
PDF下载: 下载PDF文件 查看货源
内容描述: 无电容, NMOS , 250毫安低压差稳压器具有反向电流保护 [Cap-Free, NMOS, 250mA Low Dropout Regulator with Reverse Current Protection]
分类和应用: 线性稳压器IC调节器电源电路光电二极管输出元件信息通信管理
文件页数/大小: 23 页 / 679 K
品牌: TI [ TEXAS INSTRUMENTS ]
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www.ti.com
SBVS037I – AUGUST 2003 – REVISED MAY 2006
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be
more susceptible to damage because very small parametric changes could cause the device not to meet its published
specifications.
ORDERING INFORMATION
(1)
PRODUCT
TPS732xxyyyz
V
OUT (2)
XX
is nominal output voltage (for example, 25 = 2.5V, 01 = Adjustable
(3)
).
YYY
is package designator.
Z
is package quantity.
(1)
(2)
(3)
For the most current specification and package information, refer to the Package Option Addendum located at the end of this datasheet
or see the TI website at
Output voltages from 1.2V to 4.5V in 50mV increments are available through the use of innovative factory EEPROM programming;
minimum order quantities may apply. Contact factory for details and availability.
For fixed 1.2V operation, tie FB to OUT.
ABSOLUTE MAXIMUM RATINGS
over operating junction temperature range unless otherwise noted
(1)
TPS732xx
V
IN
range
V
EN
range
V
OUT
range
V
NR
, V
FB
range
Peak output current
Output short-circuit duration
Continuous total power dissipation
Junction temperature range, T
J
Storage temperature range
ESD rating, HBM
ESD rating, CDM
(1)
–0.3 to 6.0
–0.3 to 6.0
–0.3 to 5.5
–0.3 to 6.0
Internally limited
Indefinite
See
–55 to +150
–65 to +150
2
500
°C
°C
kV
V
UNIT
V
V
V
V
Stresses beyond those listed under
absolute maximum ratings
may cause permanent damage to the device. These are stress ratings
only, and functional operation of the device at these or any other conditions beyond those indicated under the Electrical Characteristics
is not implied. Exposure to absolute maximum rated conditions for extended periods may affect device reliability.
POWER DISSIPATION RATINGS
(1)
BOARD
Low-K
(2)
High-K
(3)
PACKAGE
DBV
DBV
DCQ
DRB
R
ΘJC
64°C/W
64°C/W
15°C/W
1.2°C/W
R
ΘJA
255°C/W
180°C/W
53°C/W
40°C/W
DERATING FACTOR
ABOVE T
A
= 25°C
3.9mW/°C
5.6mW/°C
18.9mW/°C
25.0mW/°C
T
A
25°C
POWER RATING
390mW
560mW
1.89W
2.50W
T
A
= 70°C
POWER RATING
215mW
310mW
1.04W
1.38W
T
A
= 85°C
POWER RATING
155mW
225mW
0.76W
1.0W
Low-K
(2)
High-K
(3) (4)
(1)
(2)
(3)
(4)
See
Power Dissipation
in the
Applications
section for more information related to thermal design.
The JEDEC Low-K (1s) board design used to derive this data was a 3 inch x 3 inch, two-layer board with 2-ounce copper traces on top
of the board.
The JEDEC High-K (2s2p) board design used to derive this data was a 3 inch x 3 inch, multilayer board with 1-ounce internal power and
ground planes and 2-ounce copper traces on the top and bottom of the board.
Based on preliminary thermal simulations.
2