TPS65910, TPS65910A, TPS65910A3, TPS659101, TPS659102, TPS659103
TPS659104, TPS659105, TPS659106, TPS659107, TPS659108, TPS659109
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SWCS046N –MARCH 2010–REVISED APRIL 2012
VIO SMPS
over operating free-air temperature range (unless otherwise noted)
PARAMETER
TEST CONDITIONS
IOUT ≤ 800 mA
MIN
2.7
3.2
4.0
4.4
TYP
MAX
5.5
UNIT
Input voltage (VCCIO and VCC7) VIN
VOUT = 1.5 V or 1.8 V, IOUT > 800 mA
VOUT = 2.5 V, IOUT > 800 mA
VOUT = 3.3 V, IOUT > 800 mA
5.5
V
5.5
5.5
PWM mode (VIO_PSKIP = 0) or pulse skip
mode IOUT to IMAX
DC output voltage (VOUT
)
VSEL=00
–3%
–3%
–3%
–3%
1.5
1.8
2.5
3.3
0
+3%
+3%
+3%
+3%
VSEL = 01, default BOOT[1:0] = 00 and 01
VSEL = 10
V
VSEL = 11
Power down
Rated output current IOUTmax
ILMAX[1:0] = 00, default
ILMAX[1:0] = 01
500
mA
1000
P-channel MOSFET
VIN = VINmin
300
250
mΩ
µA
On-resistance RDS(ON)_PMOS
P-channel leakage current ILK_PMOS
N-channel MOSFET
VIN = 3.8 V
400
2
VIN = VINMAX, SWIO = 0 V
VIN = VMIN
300
250
mΩ
µA
On-resistance RDS(ON)_NMOS
N-channel leakage current ILK_NMOS
PMOS current limit (high-side)
VIN = 3.8 V
400
2
VIN = VINmax, SWIO = VINmax
VIN = VINmin to VINmax, ILMAX[1:0] = 00
VIN = VINmin to VINmax, ILMAX[1:0] = 01
VIN = VINmin to VINmax, ILMAX[1:0] = 10
Source current load:
650
1200
1700
mA
mA
NMOS current limit (low-side)
VIN = VINmin to VINmax, ILMAX[1:0] = 00
VIN = VINmin to VINmax, ILMAX[1:0] = 01
VIN = VINmin to VINmax, ILMAX[1:0] = 10
Sink current load:
650
1200
1700
VIN = VINmin to VINmax, ILMAX[1:0] = 00
VIN = VINmin to VINmax, ILMAX[1:0] = 01
VIN = VINmin to VINmax, ILMAX[1:0] = 10
On mode, IOUT = 0 to IOUTmax
On mode, VIN = VINmin to VINmax
VIN = 3.8 V, VOUT = 1.8 V
IOUT = 0 to 500 mA , Max slew = 100 mA/µs
IOUT = 700 to 1200 mA , Max slew = 100 mA/µs
IOUT = 200 mA
800
1200
1700
DC load regulation
DC line regulation
20
20
mV
mV
50
mV
Transient load regulation
t on, off to on
Overshoot
350
3%
µs
SMPS turned on
0.025 ×
VOUT
Power-save mode Ripple voltage
Pulse skipping mode, IOUT = 1 mA
VPP
Switching frequency
Duty cycle
3
MHz
%
100
50
Minimum On Time TON(MIN)
P-channel MOSFET
VFBIO internal resistance
35
ns
0.5
1
MΩ
Discharge resistor for power-down
sequence RDIS
During device switch-off sequence
30
Ω
Note: No discharge resistor is applied if VIO is
turned off while the device is on.
Copyright © 2010–2012, Texas Instruments Incorporated
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TPS659105 TPS659106 TPS659107 TPS659108 TPS659109
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