TPS54383, TPS54386
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SLUS774B–AUGUST 2007–REVISED OCTOBER 2007
ELECTRICAL CHARACTERISTICS (continued)
–40°C ≤ TJ ≤ +125°C, VPVDD1 = VPVDD2 = 12 V, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
BOOTSTRAP
RBOOT1
From BP to BOOT1 or BP to BOOT2,
IEXT = 50 mA
Bootstrap switch resistance
18
Ω
RBOOT2
OUTPUT STAGE (Channel 1 and Channel 2)
TJ = +25°C, VPVDD2 = 8 V
–40°C < TJ < +125°C, VPVDD2 = 8 V
ISWx peak current > 1 A(4)
VFB = 0.9 V
85
85
(3)
RDS(on)
MOSFET on resistance plus bond wire resistance
mΩ
165
200
0
(3)
tON(min)
DMIN
Minimum controllable pulse width
Minimum Duty Cycle
100
ns
%
TPS54383 fSW = 300 kHz
90
85
95
90
2
%
DMAX
Maximum Duty Cycle
TPS54386 fSW = 600 kHz
Outputs OFF
%
ISW
Switching node leakage current (sourcing)
12
µA
THERMAL SHUTDOWN
(3)
TSD
Shutdown temperature
Hysteresis
148
20
°C
(3)
TSD(hys)
(3) Ensured by design. Not production tested.
(4) See Figure 14 for ISWx peak current <1 A.
4
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