TPS54311, TPS54312
TPS54313, TPS54314
TPS54315, TPS54316
SLVS416A – FEBRUARY 2002 – JULY 2003
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ELECTRICAL CHARACTERISTICS (continued)
TJ = –40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER
ERROR AMPLIFIER
Error amplifier open loop voltage gain(1)
Error amplifier unity gain bandwidth(1)
PWM COMPARATOR
PWM comparator propagation delay time,
PWM comparator input to PH pin (ex-
cluding dead time)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
Enable hysteresis voltage, SS/ENA(1)
Falling edge deglitch, SS/ENA(1)
TPS54311
TPS54312
Internal slow-start time(1)
TPS54313
TPS54314
TPS54315
TPS54316
Charge current, SS/ENA
Discharge current, SS/ENA
POWER GOOD
Power good threshold voltage
Power good hysteresis voltage(1)
Power good falling edge deglitch(1)
Output saturation voltage, PWRGD
Leakage current, PWRGD
CURRENT LIMIT
Current limit trip point
Current limit leading edge blanking time
Current limit total response time
THERMAL SHUTDOWN
Thermal shutdown trip point(1)
Thermal shutdown hysteresis(1)
OUTPUT POWER MOSFETS
rDS(on)
Power MOSFET switches
VI = 6 V(2)
VI = 3 V(2)
59
85
88
136
mΩ
Ω
135
150
10
165
°C
°C
VI = 3 V, output shorted(1)
VI = 6 V, output shorted(1)
(1)
(1)
4
4.5
6.5
7.5
100
200
A
ns
ns
I(sink) = 2.5 mA
VI = 5.5 V
VSENSE falling
90
3
35
0.18
0.30
1
%Vref
%Vref
µs
V
µA
SS/ENA = 0 V
SS/ENA = 0.2 V,
VI = 1.5 V
2.6
3.5
4.4
2.6
3.6
4.7
3
1.5
0.82
1.20
0.03
2.5
3.3
4.5
5.6
3.3
4.7
6.1
5
2.3
4.1
5.4
6.7
4.1
5.6
7.6
8
4
µA
mA
ms
1.40
V
V
µs
10 mV overdrive(1)
70
85
ns
26
3
5
dB
MHz
TEST CONDITIONS
MIN
TYP
MAX
UNIT
(1) Specified by design
(2) Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design
4
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