TPS54310
SLVS412A – DECEMBER 2001 – REVISED JUNE 2002
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ELECTRICAL CHARACTERISTICS (continued)
TJ = –40°C to 125°C, VIN = 3 V to 6 V (unless otherwise noted)
PARAMETER
ERROR AMPLIFIER
Error amplifier open loop voltage gain
Error amplifier unity gain bandwidth
Error amplifier common-mode input voltage
range
IIB
VO
Input bias current, VSENSE
Output voltage slew rate (symmetric), COMP
1 kΩ COMP to AGND(1)
Parallel 10 kΩ, 160 pF COMP to AGND (1)
Powered by internal LDO(1)
VSENSE = Vref
1
90
3
0
60
1.4
110
5
VBIAS
250
dB
MHz
V
nA
V/µs
TEST CONDITIONS
MIN
TYP
MAX
UNIT
PWM COMPARATOR
PWM comparator propagation delay time,
PWM comparator input to PH pin (excluding
dead time)
SLOW-START/ENABLE
Enable threshold voltage, SS/ENA
Enable hysteresis voltage, SS/ENA(1)
Falling edge deglitch, SS/ENA(1)
Internal slow-start time
Charge current, SS/ENA
Discharge current, SS/ENA
POWER GOOD
Power good threshold voltage
Power good hysteresis voltage(1)
Power good falling edge deglitch(1)
Output saturation voltage, PWRGD
Leakage current, PWRGD
CURRENT LIMIT
Current limit trip point
Current limit leading edge blanking time
Current limit total response time
THERMAL SHUTDOWN
Thermal shutdown trip point(1)
Thermal shutdown hysteresis(1)
OUTPUT POWER MOSFETS
rDS( )
DS(on)
Power MOSFET switches
IO = 3 A,
IO = 3 A,
VI = 6 V(2)
VI = 3 V(2)
59
85
88
136
mΩ
135
150
10
165
°C
°C
VI = 3 V, output shorted(1)
VI = 6 V, output shorted(1)
4
4.5
6.5
7.5
100
200
A
ns
ns
I(sink) = 2.5 mA
VI = 5.5 V
VSENSE falling
90
3
35
0.18
0.30
1
%Vref
%Vref
µs
V
µA
SS/ENA = 0 V
SS/ENA = 1.3 V,
VI = 1.5 V
2.6
3
1.5
0.95
1.20
0.03
2.5
3.35
5
2.3
4.1
8
4
1.40
V
V
µs
ms
µA
mA
10 mV overdrive(1)
70
85
ns
(1) Specified by design
(2) Matched MOSFETs, low side rDS(on) production tested, high side rDS(on) specified by design
4
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