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TPS51200DRCRG4 参数 Datasheet PDF下载

TPS51200DRCRG4图片预览
型号: TPS51200DRCRG4
PDF下载: 下载PDF文件 查看货源
内容描述: 漏/源DDR终端稳压器 [SINK/SOURCE DDR TERMINATION REGULATOR]
分类和应用: 稳压器双倍数据速率
文件页数/大小: 35 页 / 1260 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TPS51200  
www.ti.com  
SLUS812FEBRUARY 2008  
OUTPUT VOLTAGE  
vs  
OUTPUT CURRENT  
790  
V
= 3.3 V  
IN  
0°C  
780  
770  
760  
750  
740  
730  
25°C  
-40°C  
DDR3  
-40°C  
0°C  
720  
710  
700  
85°C  
25°C  
85°C  
-3  
-2  
-1  
0
1
– Output Current – A  
2
3
I
OUT  
Figure 6. DC Regulaltion  
Figure 7. Transient  
LDO Design Guidelines  
The minimum input to output voltage difference (headroom) decides the lowest usable supply voltage Gm-driven  
to drive a certain load. For TPS51200, a minimum of 300 mV (VLDOINMIIN – VOMAX) is needed in order to  
support a Gm driven sourcing current of 2 A based on a design of VIN = 3.3 V and COUT = 3 × 10µF. Because the  
TPS51200 is essentially a Gm driven LDO, its impedance characteristics are both a function of the 1/Gm and  
RDS(on) of the sourcing MOSFET (see Figure 8). The current inflection point of the design is between 2 A and 3 A.  
When ISRC is less than the inflection point, the LDO is considered to be operating in the Gm region; when ISRC is  
greater than the inflection point but less than the overcurrent limit point, the LDO is operating in the RDS(on)  
region. The maximum sourcing RDS(on) is 0.144 with VIN = 3.0 V and TJ = 125°C.  
14  
Copyright © 2008, Texas Instruments Incorporated  
Product Folder Link(s): TPS51200  
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