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SLVS841C – NOVEMBER 2008 – REVISED SEPTEMBER 2009
RECOMMENDED OPERATING CONDITIONS
MIN
V
IN
V
EN
V
EN
V
IH
V
IL
I
OUT
R
ILIM
I
O
Input voltage, IN
Enable voltage
High-level input voltage on EN or EN
Low-level input voltage on EN or EN
Continuous output current, OUT
–40 °C
≤
T
J
≤
125 °C
–40 °C
≤
T
J
≤
105 °C
0
0
15
0
0.1
–40
-40
125
105
I
OUT
≤
1.2 A
I
OUT
≤
1.5 A
TPS2552/52-1
TPS2553/53-1
2.5
0
0
1.1
0.66
1.2
1.5
232
10
MAX
6.5
6.5
6.5
UNIT
V
V
V
A
kΩ
mA
µF
°C
Current-limit threshold resistor range (nominal 1%) from ILIM to GND
Continuous FAULT sink current
Input de-coupling capacitance, IN to GND
T
J
(1)
Operating virtual junction
temperature
(1)
See "Dissipation Rating Table" and "Power Dissipation and Junction Temperature" sections for details on how to calculate maximum
junction temperature for specific applications and packages.
ELECTRICAL CHARACTERISTICS
over recommended operating conditions, V
/EN
= 0 V, or V
EN
= V
IN
, R
FAULT
= 10 kΩ (unless otherwise noted)
PARAMETER
POWER SWITCH
DBV package, T
J
= 25 °C
DBV package, –40 °C
≤T
J
≤125
°C
r
DS(on)
Static drain-source on-state resistance DRV package, T
J
= 25 °C
DRV package, –40 °C
≤T
J
≤105
°C
DRV package, –40 °C
≤T
J
≤125
°C
t
r
t
f
Rise time, output
V
IN
= 6.5 V
V
IN
= 2.5 V
V
IN
= 6.5 V
V
IN
= 2.5 V
C
L
= 1
µF,
R
L
= 100
Ω,
(see
0.2
0.2
1.1
0.7
100
85
95
135
115
140
150
1.5
1
0.5
0.5
ms
mΩ
TEST CONDITIONS
(1)
MIN
TYP
MAX
UNIT
Fall time, output
ENABLE INPUT EN OR EN
Enable pin turn on/off threshold
I
EN
t
on
t
off
Input current
Turnon time
Turnoff time
V
EN
= 0 V or 6.5 V, V
/EN
= 0 V or 6.5 V
C
L
= 1
µF,
R
L
= 100
Ω,
(see
0.66
–0.5
1.1
0.5
3
3
V
µA
ms
ms
CURRENT LIMIT
R
ILIM
=
15 kΩ
R
ILIM
=
20 kΩ
–40 °C
≤T
J
≤105
°C
T
J
= 25 °C
–40 °C
≤T
J
≤125
°C
T
J
= 25 °C
–40 °C
≤T
J
≤125
°C
1610
1215
1200
490
475
110
50
1700
1295
1295
520
520
130
75
2
1800
1375
1375
550
565
150
100
µs
mA
I
OS
Current-limit threshold (Maximum DC output current I
OUT
delivered to load) and
Short-circuit current, OUT connected to GND
R
ILIM
=
49.9 kΩ
R
ILIM
= 210 kΩ
ILIM shorted to IN
t
IOS
Response time to short circuit
V
IN
= 5 V (see
REVERSE-VOLTAGE PROTECTION
Reverse-voltage comparator trip point
(V
OUT
– V
IN
)
Time from reverse-voltage condition
to MOSFET turn off
V
IN
= 5 V
95
3
135
5
190
7
mV
ms
(1)
Pulse-testing techniques maintain junction temperature close to ambient temperature; thermal effects must be taken into account
separately.
Copyright © 2008–2009, Texas Instruments Incorporated
3
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