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TMS320F28335ZHHA 参数 Datasheet PDF下载

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型号: TMS320F28335ZHHA
PDF下载: 下载PDF文件 查看货源
内容描述: 数字信号控制器(DSC ) [Digital Signal Controllers (DSCs)]
分类和应用: 微控制器和处理器外围集成电路数字信号处理器装置PC时钟
文件页数/大小: 195 页 / 2496 K
品牌: TI [ TEXAS INSTRUMENTS ]
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TMS320F28335, TMS320F28334, TMS320F28332  
TMS320F28235, TMS320F28234, TMS320F28232  
www.ti.com  
SPRS439IJUNE 2007REVISED MARCH 2011  
6.14.7 External Interface Ready-on-Read Timing With One External Wait State  
Table 6-41. External Interface Read Switching Characteristics (Ready-on-Read, 1 Wait State)  
PARAMETER  
MIN  
MAX  
1
UNIT  
ns  
td(XCOH-XZCSL)  
td(XCOHL-XZCSH)  
td(XCOH-XA)  
Delay time, XCLKOUT high to zone chip-select active low  
Delay time, XCLKOUT high/low to zone chip-select inactive high  
Delay time, XCLKOUT high to address valid  
–1  
0.5  
1.5  
0.5  
0.5  
ns  
ns  
td(XCOHL-XRDL)  
td(XCOHL-XRDH)  
th(XA)XZCSH  
Delay time, XCLKOUT high/low to XRD active low  
Delay time, XCLKOUT high/low to XRD inactive high  
Hold time, address valid after zone chip-select inactive high  
Hold time, address valid after XRD inactive high  
ns  
– 1.5  
ns  
(1)  
ns  
(1)  
th(XA)XRD  
ns  
(1) During inactive cycles, the XINTF address bus always holds the last address put out on the bus, except XA0, which remains high. This  
includes alignment cycles.  
Table 6-42. External Interface Read Timing Requirements (Ready-on-Read, 1 Wait State)  
MIN  
MAX  
UNIT  
ns  
(1)  
ta(A)  
Access time, read data from address valid  
(LR + AR) – 16  
(1)  
ta(XRD)  
Access time, read data valid from XRD active low  
Setup time, read data valid before XRD strobe inactive high  
Hold time, read data valid after XRD inactive high  
AR – 14  
ns  
tsu(XD)XRD  
th(XD)XRD  
14  
0
ns  
ns  
(1) LR = Lead period, read access. AR = Active period, read access. See Table 6-36.  
Table 6-43. Synchronous XREADY Timing Requirements (Ready-on-Read, 1 Wait State)(1)  
MIN  
12  
6
MAX  
UNIT  
ns  
tsu(XRDYsynchL)XCOHL  
th(XRDYsynchL)  
Setup time, XREADY (synchronous) low before XCLKOUT high/low  
Hold time, XREADY (synchronous) low  
ns  
te(XRDYsynchH)  
Earliest time XREADY (synchronous) can go high before the sampling  
XCLKOUT edge  
3
ns  
tsu(XRDYsynchH)XCOHL  
th(XRDYsynchH)XZCSH  
Setup time, XREADY (synchronous) high before XCLKOUT high/low  
Hold time, XREADY (synchronous) held high after zone chip select high  
12  
0
ns  
ns  
(1) The first XREADY (synchronous) sample occurs with respect to E in Figure 6-25:  
E = (XRDLEAD + XRDACTIVE) tc(XTIM)  
When first sampled, if XREADY (synchronous) is found to be high, then the access will finish. If XREADY (synchronous) is found to be  
low, it is sampled again each tc(XTIM) until it is found to be high.  
For each sample (n) the setup time (F) with respect to the beginning of the access can be calculated as:  
F = (XRDLEAD + XRDACTIVE +n 1) tc(XTIM) tsu(XRDYsynchL)XCOHL  
where n is the sample number: n = 1, 2, 3, and so forth.  
Table 6-44. Asynchronous XREADY Timing Requirements (Ready-on-Read, 1 Wait State)  
MIN  
11  
6
MAX  
UNIT  
ns  
tsu(XRDYAsynchL)XCOHL  
th(XRDYAsynchL)  
Setup time, XREADY (asynchronous) low before XCLKOUT high/low  
Hold time, XREADY (asynchronous) low  
ns  
te(XRDYAsynchH)  
Earliest time XREADY (asynchronous) can go high before the sampling  
XCLKOUT edge  
3
ns  
tsu(XRDYAsynchH)XCOHL  
th(XRDYasynchH)XZCSH  
Setup time, XREADY (asynchronous) high before XCLKOUT high/low  
Hold time, XREADY (asynchronous) held high after zone chip select high  
11  
0
ns  
ns  
Copyright © 2007–2011, Texas Instruments Incorporated  
Electrical Specifications  
159  
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TMS320F28232