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THS4631 参数 Datasheet PDF下载

THS4631图片预览
型号: THS4631
PDF下载: 下载PDF文件 查看货源
内容描述: 高电压,高压摆率,宽带FET输入运算放大器 [HIGH-VOLTAGE, HIGH SLEW RATE, WIDEBAND FET-INPUT OPERATIONAL AMPLIFIER]
分类和应用: 运算放大器输入元件高压
文件页数/大小: 27 页 / 1287 K
品牌: TI [ TEXAS INSTRUMENTS ]
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THS4631  
www.ti.com  
SLOS451ADECEMBER 2004REVISED MARCH 2005  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated  
circuits be handled with appropriate precautions. Failure to observe proper handling and installation  
procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision  
integrated circuits may be more susceptible to damage because very small parametric changes could  
cause the device not to meet its published specifications.  
ABSOLUTE MAXIMUM RATINGS  
over operating free-air temperature range (unless otherwise noted)(1)  
UNITS  
VS  
VI  
Supply voltage, VS– to VS+  
33 V  
Input voltage  
±VS  
(2)  
IO  
Output current  
150 mA  
Continuous power dissipation  
Maximum junction temperature(2)  
Operating free-air temperature, continues operation, long-term reliability(2)  
Storage temperature range  
See Dissipation Rating Table  
TJ  
150°C  
125°C  
TA  
Tstg  
65°C to 150°C  
300°C  
Lead temperature  
1,6 mm (1/16 inch) from case for 10 seconds  
HBM  
CDM  
MM  
1000 V  
ESD ratings:  
1500 V  
100 V  
(1) The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may  
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are  
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.  
(2) The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may  
result in reduced reliability and/or lifetime of the device.  
PACKAGE DISSIPATION RATINGS  
POWER RATING(1) (TJ =125°C)  
PACKAGE  
θJC (°C/W)  
θJA (°C/W)  
T
A 25°C  
TA = 85°C  
0.47 W  
D (8)(2)  
DDA (8)  
DGN (8)  
38.3  
9.2  
95  
1.1 W  
45.8  
58.4  
2.3 W  
0.98 W  
4.7  
2.14 W  
1.11 W  
(1) Power rating is determined with a junction temperature of 125°C. This is the point where distortion starts to substantially increase.  
Thermal management of the final PCB should strive to keep the junction temperature at or below 125°C for best performance.  
(2) This data was taken using the JEDEC standard High-K test PCB.  
RECOMMENDED OPERATING CONDITIONS  
over operating free-air temperature range (unless otherwise noted)  
MIN  
±5  
MAX  
±15  
30  
UNITS  
V
Dual Supply  
VS  
TA  
Supply Voltage  
Single Supply  
10  
Operating free-air temperature  
-40  
85  
°C  
2
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