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THS4511RGTT 参数 Datasheet PDF下载

THS4511RGTT图片预览
型号: THS4511RGTT
PDF下载: 下载PDF文件 查看货源
内容描述: 宽带,低噪声,低失真全差动放大器 [WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER]
分类和应用: 放大器
文件页数/大小: 25 页 / 2807 K
品牌: TI [ TEXAS INSTRUMENTS ]
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THS4511  
www.ti.com  
SLOS471SEPTEMBER 2005  
Layout Recommendations  
and L3.  
8. A single-point connection to ground on L2 is  
recommended for the input termination resistors  
R1 and R2. This should be applied to the input  
gain resistors if termination is not used.  
It is recommended to follow the layout of the external  
components near the amplifier, ground plane con-  
struction, and power routing of the EVM as closely as  
possible. General guidelines are:  
9. The THS4511 recommended PCB footprint is  
shown in Figure 53.  
1. Signal routing should be direct and as short as  
possible into and out of the operational amplifier  
circuit.  
0.144  
0.049  
2. The feedback path should be short and direct  
avoiding vias.  
3. Ground or power planes should be removed from  
directly under the amplifier’s input and output  
pins.  
0.012  
Pin 1  
0.0095  
4. An output resistor is recommended on each  
output, as near to the output pin as possible.  
0.015  
0.144  
0.0705  
0.0195  
5. Two 10-µF and two 0.1-µF power-supply decoup-  
ling capacitors should be placed as near to the  
power-supply pins as possible.  
0.010  
vias  
0.032  
6. Two 0.1-µF capacitors should be placed between  
the CM input pins and ground. This limits noise  
coupled into the pins. One each should be placed  
to ground near pin 4 and pin 9.  
0.030  
0.0245  
Top View  
7. It is recommended to split the ground pane on  
layer 2 (L2) as shown below and to use a solid  
ground on layer 3 (L3). A single-point connection  
should be used between each split section on L2  
Figure 53. QFN Etch and Via Pattern  
20  
 
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