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THS4511RGTT 参数 Datasheet PDF下载

THS4511RGTT图片预览
型号: THS4511RGTT
PDF下载: 下载PDF文件 查看货源
内容描述: 宽带,低噪声,低失真全差动放大器 [WIDEBAND, LOW NOISE, LOW DISTORTION FULLY DIFFERENTIAL AMPLIFIER]
分类和应用: 放大器
文件页数/大小: 25 页 / 2807 K
品牌: TI [ TEXAS INSTRUMENTS ]
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THS4511  
www.ti.com  
SLOS471SEPTEMBER 2005  
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated  
circuits be handled with appropriate precautions. Failure to observe proper handling and installation  
procedures can cause damage.  
ESD damage can range from subtle performance degradation to complete device failure. Precision  
integrated circuits may be more susceptible to damage because very small parametric changes could  
cause the device not to meet its published specifications.  
ABSOLUTE MAXIMUM RATINGS(1)  
over operating free-air temperature range (unless otherwise noted)  
UNIT  
VSS  
VI  
Supply voltage  
Input voltage  
VS– to VS+  
5.5 V  
±VS  
VID  
IO  
Differential input voltage  
4 V  
200 mA  
Output current  
Continuous power dissipation  
See Dissipation Rating Table  
150°C  
TJ  
Maximum junction temperature(2)  
Maximum junction temperature, continuous operation, long term reliability(3)  
Operating free-air temperature range  
Storage temperature range  
TJ  
125°C  
TA  
Tstg  
–40°C to 85°C  
–65°C to 150°C  
300°C  
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds  
HBM  
2000 V  
ESD ratings  
CDM  
MM  
1500 V  
100 V  
(1) Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may  
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond  
those specified is not implied.  
(2) The absolute maximum temperature under any condition is limited by the constraints of the silicon process.  
(3) The maximum junction temperature for continuous operation is limited by the package constraints. Operation above this temperature  
may result in reduced reliability and/or lifetime of the device. The THS4511 incorporates a (QFN) exposed thermal pad on the underside  
of the chip. This acts as a heatsink and must be connected to a thermally dissipative plane for proper power dissipation. Failure to do so  
may result in exceeding the maximum junction temperature which could permanently damage the device. See TI technical brief  
SLMA002 and SLMA004 for more information about utilizing the QFN thermally enhanced package.  
DISSIPATION RATINGS TABLE PER PACKAGE  
POWER RATING  
PACKAGE(1)  
θJC  
θJA  
TA 25°C  
TA = 85°C  
RGT (16)  
2.4°C/W  
39.5°C/W  
2.3 W  
225 mW  
(1) For the most current package and ordering information, see the Package Option Addendum at the end of this document, or see the TI  
Web site at www.ti.com.  
2