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MSP430F4152IRGZT 参数 Datasheet PDF下载

MSP430F4152IRGZT图片预览
型号: MSP430F4152IRGZT
PDF下载: 下载PDF文件 查看货源
内容描述: 混合信号微控制器 [MIXED SIGNAL MICROCONTROLLER]
分类和应用: 微控制器和处理器外围集成电路装置PC时钟
文件页数/大小: 82 页 / 1554 K
品牌: TI [ TEXAS INSTRUMENTS ]
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MSP430F41x2  
MIXED SIGNAL MICROCONTROLLER  
SLAS648E -- APRIL 2009 -- REVISED MARCH 2011  
electrical characteristics over recommended ranges of supply voltage and operating free-air  
temperature (unless otherwise noted) (continued)  
flash memory  
TEST  
CONDITIONS  
PARAMETER  
V
MIN NOM  
MAX  
UNIT  
CC  
V
CC(PGM/  
ERASE)  
Program and Erase supply voltage  
Flash Timing Generator frequency  
2.2  
3.6  
V
f
I
I
t
t
257  
476  
5
kHz  
mA  
FTG  
Supply current from DV during program  
2.5V/3.6V  
2.5V/3.6V  
2.5V/3.6V  
2.5V/3.6V  
3
PGM  
CC  
Supply current from DV during erase  
CC  
3
7
mA  
ERASE  
CPT  
Cumulative program time  
Cumulative mass erase time  
Program/Erase endurance  
Data retention duration  
see Note 1  
see Note 2  
10  
ms  
200  
ms  
CMErase  
4
5
10  
100  
10  
cycles  
years  
t
T = 25C  
J
Retention  
t
t
t
t
t
t
Word or byte program time  
35  
30  
Word  
st  
Block program time for 1 byte or word  
Block, 0  
Block program time for each additional byte or word  
Block program end-sequence wait time  
Mass erase time  
21  
Block, 1-63  
Block, End  
Mass Erase  
Seg Erase  
see Note 3  
t
FTG  
6
5297  
4819  
Segment erase time  
NOTES: 1. The cumulative program time must not be exceeded when writingto a64--byte flashblock. This parameter applies to all programming  
methods: individual word/byte write and block write modes.  
2. The mass erase duration generated by the flash timing generator is at least 11.1 ms ( = 5297x1 / f , max = 5297 x 1 / 476 kHz).  
FTG  
To achieve the required cumulative mass erase time the Flash Controller’s mass erase operation can be repeated until this time is  
met. (A worst case minimum of 19 cycles is required.)  
3. These values are hardwired into the Flash Controller’s state machine (t  
= 1 / f  
).  
FTG  
FTG  
JTAG and Spy-Bi-Wire interface  
TEST  
CONDITIONS  
PARAMETER  
V
MIN  
TYP  
MAX  
UNIT  
CC  
f
t
Spy-Bi-Wire input frequency  
2.2 V/3 V  
2.2 V/3 V  
0
8
MHz  
us  
SBW  
Spy-Bi-Wire low clock pulse length  
0.025  
15  
SBW,Low  
Spy-Bi-Wire enable time,  
TEST high to acceptance of first clock edge  
(see Note 1)  
t
2.2 V/3 V  
1
us  
SBW,En  
t
f
Spy-Bi-Wire return to normal operation time  
2.2 V/3 V  
2.2 V  
15  
0
100  
5
us  
SBW,Ret  
TCK  
MHz  
MHz  
k  
TCK input frequency (see Note 2)  
3 V  
0
10  
90  
R
Internal pulldown resistance on TEST  
2.2 V/3 V  
25  
60  
Internal  
NOTES: 1. Tools accessing the Spy-Bi-Wire interface need to wait for the maximum t  
before applying the first SBWCLK clock edge.  
time after pulling the TEST/SBWCLK pin high  
SBW,En  
2.  
f
may be restricted to meet the timing requirements of the module selected.  
TCK  
49  
POST OFFICE BOX 655303 DALLAS, TEXAS 75265  
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