MOC3020 THRU MOC3023
OPTOCOUPLERS/OPTOISOLATORS
SOES025 – OCTOBER 1986 – REVISED OCTOBER 1995
electrical characteristics at 25°C free-air temperature (unless otherwise noted)
PARAMETER
IR
VF
I(DRM)
dv/dt
dv/dt(c)
Static reverse current
Static forward voltage
Repetitive off-state current, either direction
Critical rate of rise of off-state voltage
Critical rate of rise of commutating voltage
MOC3020
IFT
Input trigger current,
I
i
either direction
MOC3021
MOC3022
MOC3023
VTM
IH
Peak on-state voltage, either direction
Holding current, either direction
ITM = 100 mA
Output supply voltage = 3 V
O
l
l
VR = 3 V
IF = 10 mA
V(DRM) = 400 V,
See Figure 1
IO = 15 mA,
See Note 5
See Figure 1
TEST CONDITIONS
MIN
TYP
0.05
1.2
10
100
0.15
15
8
5
3
1.4
100
30
15
10
5
3
V
µA
mA
A
MAX
100
1.5
100
UNIT
µA
V
nA
V/µs
V/µs
NOTE 5: Test voltage must be applied at a rate no higher than 12 V/µs.
PARAMETER MEASUREMENT INFORMATION
VCC
1
6
VI = 30 V rms
RL
2
10 kΩ
Input
(see Note A)
2N3904
4
NOTE A. The critical rate of rise of off-state voltage, dv/dt, is measured with the input at 0 V. The frequency of Vin is increased until the
phototriac turns on. This frequency is then used to calculate the dv/dt according to the formula:
dv dt
+
2
2πfV
in
The critical rate of rise of commutating voltage, dv/dt(c), is measured by applying occasional 5-V pulses to the input and increasing
the frequency of Vin until the phototriac stays on (latches) after the input pulse has ceased. With no further input pulses, the
frequency of Vin is then gradually decreased until the phototriac turns off. The frequency at which turn-off occurs may then be used
to calculate the dv/dt(c) according to the formula shown above.
Figure 1. Critical Rate of Rise Test Circuit
7–2
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