LM555
SNAS548C –FEBRUARY 2000–REVISED MARCH 2013
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Connection Diagram
Top View
Figure 1. PDIP, SOIC,
and VSSOP Packages
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)
Supply Voltage
+18V
(3)
Power Dissipation
LM555CM, LM555CN(4)
1180 mW
613 mW
LM555CMM
Operating Temperature Ranges
LM555C
0°C to +70°C
Storage Temperature Range
Soldering Information
PDIP Package
−65°C to +150°C
Soldering (10 Seconds)
260°C
Small Outline Packages
(SOIC and VSSOP)
Vapor Phase (60 Seconds)
Infrared (15 Seconds)
215°C
220°C
(1) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for
which the device is functional, but do not ensure specific performance limits. Electrical Characteristics state DC and AC electrical
specifications under particular test conditions which ensures specific performance limits. This assumes that the device is within the
Operating Ratings. Specifications are not ensured for parameters where no limit is given, however, the typical value is a good indication
of device performance.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3) For operating at elevated temperatures the device must be derated above 25°C based on a +150°C maximum junction temperature and
a thermal resistance of 106°C/W (PDIP), 170°C/W (S0IC-8), and 204°C/W (VSSOP) junction to ambient.
(4) Refer to RETS555X drawing of military LM555H and LM555J versions for specifications.
2
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