SNVS682C – NOVEMBER 2010 – REVISED MAY 2013
ELECTRICAL CHARACTERISTICS
Limits in standard type face are for T
J
= 25°C and those with
boldface type
apply over the full
Operating Temperature
Range
( T
J
=
−40°C
to +125°C). Minimum and Maximum limits are specified through test, design, or statistical correlation.
Typical values represent the most likely parametric norm at T
J
= 25°C, and are provided for reference purposes only. Unless
otherwise stated the following conditions apply: V
CC
= 12V.
Symbol
V
CC
SUPPLY
I
VCC
V
CC-UVLO
Operating supply current
Rising threshold
Falling threshold
Hysterisis
COFF
V
COFF
R
COFF
t
COFF
V
ISNS
t
ISNS
Time out threshold
Off timer sinking impedance
Restart timer
ISNS limit threshold
Leading edge blanking time
Current limit reset delay
ISNS limit to GATE delay
CURRENT SENSE COMPARATOR
V
FILTER
R
FILTER
V
OS
V
DRVH
V
DRVL
I
DRV
t
DV
FILTER open circuit voltage
FILTER impedance
Current sense comparator offset voltage
GATE high saturation
GATE low saturation
Peak souce current
Peak sink current
Rise time
Fall time
THERMAL SHUTDOWN
T
SD
Thermal shutdown temperature
Thermal shutdown hysteresis
THERMAL SPECIFICATION
R
θJA
R
θJC
(1)
VSSOP junction to ambient
VSSOP junction to case
124
76
°C/W
See
(1)
Parameter
Conditions
Min
Typ
1.58
7.4
Max
2.25
7.7
Units
mA
V
6.0
6.4
1
1.22
5
1.276
33
180
1.327
60
V
Ω
µs
CURRENT LIMIT
1.17
4
1.269
125
180
ISNS = 0 to 1.75V step
720
-4.0
I
GATE
= 50 mA
I
GATE
= 100 mA
GATE = V
CC
/2
GATE = V
CC
/2
C
load
= 1 nF
C
load
= 1 nF
33
750
1.12
0.1
0.24
0.22
-0.77
0.88
15
15
165
20
°C
ns
4.0
0.50
0.50
A
780
1.364
V
ns
µs
ns
mV
MΩ
mV
V
GATE DRIVE OUTPUT
Junction-to-ambient thermal resistance is highly application and board-layout dependent. In applications where high maximum power
dissipation exists, special care must be paid to thermal dissipation issues in board design. In applications where high power dissipation
and/or poor package thermal resistance is present, the maximum ambient temperature may have to be derated. Maximum ambient
temperature (T
A-MAX
) is dependent on the maximum operating junction temperature (T
J-MAX-OP
= 125°C), the maximum power dissipation
of the device in the application (P
D-MAX
), and the junction-to ambient thermal resistance of the part/package in the application (R
θJA
), as
given by the following equation: T
A-MAX
= T
J-MAX-OP
– (R
θJA
× P
D-MAX
).
4
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