LM27761
ZHCSEO7C –OCTOBER 2015–REVISED JANUARY 2017
www.ti.com.cn
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN
MAX
5.8
UNIT
Ground voltage, VIN to GND or GND to VOUT
EN
V
(GND − 0.3 V)
(VIN + 0.3 V)
300
Continuous output current, CPOUT and VOUT
mA
°C
(3)
TJMAX
150
Storage temperature, Tstg
–65
150
°C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under . Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) If Military/Aerospace specified devices are required, contact the TI Sales Office/Distributors for availability and specifications.
(3) The maximum power dissipation must be de-rated at elevated temperatures and is limited by TJMAX (maximum junction temperature), TA
(ambient temperature) and RθJA (junction-to-ambient thermal resistance). The maximum power dissipation at any temperature is:
PDissMAX = (TJMAX – TA)/RθJA up to the value listed in the Absolute Maximum Ratings.
6.2 ESD Ratings
VALUE
±1000
±250
UNIT
Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)
Charged-device model (CDM), per JEDEC specification JESD22-C101(2)
Electrostatic
discharge
V(ESD)
V
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
6.3 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
MIN
MAX
85
UNIT
Operating ambient temperature, TA
Operating junction temperature, TJ
Operating input voltage, VIN
–40
–40
2.7
0
°C
°C
V
125
5.5
Operating output current, IOUT
250
mA
6.4 Thermal Information
LM27761
THERMAL METRIC(1)
WSON (DSG)
UNIT
8 PINS
67.7
89.9
37.6
2.4
RθJA
Junction-to-ambient thermal resistance
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
RθJC(top)
RθJB
Junction-to-case (top) thermal resistance
Junction-to-board thermal resistance
ψJT
Junction-to-top characterization parameter
Junction-to-board characterization parameter
Junction-to-case (bottom) thermal resistance
ψJB
38
RθJC(bot)
9.4
(1) For more information about traditional and new thermal metrics, see Semiconductor and IC Package Thermal Metrics.
4
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