DS26C31M, DS26C31T
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SNLS375B –JUNE 1998–REVISED APRIL 2013
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Absolute Maximum Ratings(1)(2)(3)
Supply Voltage (VCC
DC Input Voltage (VIN
DC Output Voltage (VOUT
Clamp Diode Current (IIK, IOK
DC Output Current, per pin (IOUT
DC VCC or GND Current, per pin (ICC
Storage Temperature Range (TSTG
)
−0.5V to 7.0V
−1.5V to VCC +1.5V
−0.5V to 7V
)
)
)
±20 mA
)
±150 mA
)
)
−65°C to +150°C
2419 mW
1736 mW
1226 mW
1182 mW
2134 mW
260°C
Max. Power Dissipation (PD) @25°C(4)
Ceramic “NFE” Pkg.
Plastic “NFG” Pkg.
SOIC “D” Pkg.
Ceramic “NAD” Pkg.
Ceramic “NAJ” Pkg.
(Soldering, 4 sec.)
Lead Temperature (TL)
This device does not meet 2000V ESD Rating.(5)
(1) Unless otherwise specified, all voltages are referenced to ground. All currents into device pins are positive, all currents out of device
pins are negative.
(2) Absolute Maximum Ratings are those values beyond which the safety of the device cannot be verified. They are not meant to imply that
the device should be operated at these limits. The table of “Electrical Characteristics” provide conditions for actual device operation.
(3) If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and
specifications.
(4) Ratings apply to ambient temperature at 25°C. Above this temperature derate NFG package at 13.89 mW/°C, NFE package 16.13
mW/°C, D package 9.80 mW/°C, NAJ package 12.20 mW/°C, and NAD package 6.75 mW/°C.
(5) ESD Rating: HBM (1.5 kΩ, 100 pF); Inputs ≥ 1500V; Outputs ≥ 1000V; EIAJ (0Ω, 200 pF) ≥ 350V
Operating Conditions
Min
4.50
0
Max
5.50
VCC
+85
Units
V
Supply Voltage (VCC
)
DC Input or Output Voltage
(VIN, VOUT
)
V
Operating Temperature Range (TA)
DS26C31T
DS26C31M
−40
−55
°C
°C
ns
+125
500
Input Rise or Fall Times (tr, tf)
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