SLES256 – MAY 2010
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TYPICAL CHARACTERISTICS
EFFICIENCY
vs
SWITCHING FREQUENCY (DRV8332)
100
90
80
70
1.10
T
J
= 25°C
1.08
1.06
1.04
1.02
1.00
0.98
0.96
8.0
NORMALIZED R
DS(on)
vs
GATE DRIVE
60
50
40
30
20
10
0
0
Full Bridge
Load = 5 A
PVDD = 50 V
T
C
= 75°C
50
100 150 200 250 300 350 400 450 500
f – Switching Frequency – kHz
Normalized R
DS(on)
/ (R
DS(on)
at 12 V)
Efficiency – %
8.5
9.0
9.5
10.0
10.5
11.0
11.5
12
GVDD – Gate Drive – V
Figure 1.
NORMALIZED R
DS(on)
vs
JUNCTION TEMPERATURE
1.6
GVDD = 12 V
6
T
J
= 25°C
5
4
1.2
Figure 2.
DRAIN TO SOURCE DIODE FORWARD
ON CHARACTERISTICS
Normalized R
DS(on)
/ (R
DS(on)
at 25
o
C)
1.4
I – Current – A
0
20
40
60
80
100 120 140
o
3
2
1
1.0
0.8
0.6
0
0.4
–40 –20
–1
0
0.2
0.4
0.6
0.8
1
1.2
T
J
– Junction Temperature – C
V – Voltage – V
Figure 3.
Figure 4.
8
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