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DRV8300DPWRQ1 参数 Datasheet PDF下载

DRV8300DPWRQ1图片预览
型号: DRV8300DPWRQ1
PDF下载: 下载PDF文件 查看货源
内容描述: [具有自举二极管的汽车类 100V(最大值)简单三相栅极驱动器 | PW | 20 | -40 to 125]
分类和应用: 栅极驱动二极管驱动器
文件页数/大小: 26 页 / 1519 K
品牌: TI [ TEXAS INSTRUMENTS ]
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DRV8300-Q1  
ZHCSPF5 APRIL 2022  
www.ti.com.cn  
9.2.1 Design Requirements  
9-1 lists the example design input parameters for system design.  
9-1. Design Parameters  
EXAMPLE DESIGN PARAMETER  
REFERENCE  
EXAMPLE VALUE  
MOSFET  
-
CSD19532Q5B  
12 V  
Gate Supply Voltage  
Gate Charge  
VGVDD  
QG  
48 nC  
9.2.2 Bootstrap Capacitor and GVDD Capacitor Selection  
The bootstrap capacitor must be sized to maintain the bootstrap voltage above the undervoltage lockout for  
normal operation. 方程1 calculates the maximum allowable voltage drop across the bootstrap capacitor:  
¿8$56: = 8)8&& F8$116&F8  
$5678  
(1)  
=12 V 0.85 V 4.5 V = 6.65 V  
where  
VGVDD is the supply voltage of the gate drive  
VBOOTD is the forward voltage drop of the bootstrap diode  
VBSTUV is the threshold of the bootstrap undervoltage lockout  
In this example the allowed voltage drop across bootstrap capacitor is 6.65 V. It is generally recommended that  
ripple voltage on both the bootstrap capacitor and GVDD capacitor should be minimized as much as possible.  
Many of commercial, industrial, and automotive applications use ripple value between 0.5 V to 1 V.  
The total charge needed per switching cycle can be estimated with 方程2:  
+.$5_64#05  
3616 = 3) +  
B
59  
(2)  
=48 nC + 220 μA/20 kHz = 50 nC + 11 nC = 61 nC  
where  
QG is the total MOSFET gate charge  
ILBS_TRAN is the bootstrap pin leakage current  
fSW is the is the PWM frequency  
The minimum bootstrap capacitor an then be estimated as below assuming 1V ΔVBSTx  
:
3
%
=
616W  
$56_/+0  
¿8  
$56:  
(3)  
= 61 nC / 1 V = 61 nF  
The calculated value of minimum bootstrap capacitor is 61 nF. It should be noted that, this value of capacitance  
is needed at full bias voltage. In practice, the value of the bootstrap capacitor must be greater than calculated  
value to allow for situations where the power stage may skip pulse due to various transient conditions. It is  
recommended to use a 100 nF bootstrap capacitor in this example. It is also recommenced to include enough  
margin and place the bootstrap capacitor as close to the BSTx and SHx pins as possible.  
%
)8&&  
R 10 × %$56:  
(4)  
= 10*100 nF= 1 μF  
Copyright © 2022 Texas Instruments Incorporated  
16  
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Product Folder Links: DRV8300-Q1  
 
 
 
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