欢迎访问ic37.com |
会员登录 免费注册
发布采购

BQ25505 参数 Datasheet PDF下载

BQ25505图片预览
型号: BQ25505
PDF下载: 下载PDF文件 查看货源
内容描述: 超低功耗升压充电器与电池管理和自治权力 [Ultra Low Power Boost Charger with Battery Management and Autonomous Power]
分类和应用: 电池
文件页数/大小: 34 页 / 1409 K
品牌: TI [ TEXAS INSTRUMENTS ]
 浏览型号BQ25505的Datasheet PDF文件第1页浏览型号BQ25505的Datasheet PDF文件第2页浏览型号BQ25505的Datasheet PDF文件第3页浏览型号BQ25505的Datasheet PDF文件第4页浏览型号BQ25505的Datasheet PDF文件第6页浏览型号BQ25505的Datasheet PDF文件第7页浏览型号BQ25505的Datasheet PDF文件第8页浏览型号BQ25505的Datasheet PDF文件第9页  
bq25505  
www.ti.com  
SLUSBJ3B AUGUST 2013REVISED JANUARY 2014  
ELECTRICAL CHARACTERISTICS  
Over recommended temperature range, typical values are at TA = 25°C. Unless otherwise noted, specifications apply for  
conditions of VSTOR = 4.2 V. External components, CIN = 4.7 µF, L1 = 22 µH, CSTOR= 4.7 µF  
PARAMETER  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
BOOST CHARGER  
VIN(DC)  
DC input voltage into VIN_DC  
Cold-start completed  
100  
5100  
285  
mV  
mA  
I-CHG(CBC_LIM)  
Cycle-by-cycle current limit of charger  
0.5V < VIN < 4.0 V; VSTOR = 4.2  
V
230  
PIN  
Input power range for normal charging  
VBAT_OV > VSTOR >  
VSTOR_CHGEN  
0.005  
1.6  
510  
400  
1.9  
mW  
mV  
V
VIN(CS)  
Minimum input voltage for cold start circuit to  
start charging VSTOR  
VBAT_SEC < VBAT_UV; VSTOR  
= 0 V; 0°C < TA < 85°C  
330  
1.73  
5
VSTOR_CHGEN  
PIN(CS)  
Voltage on VSTOR when cold start operation  
ends and normal charger operation commences  
Minimum cold-start input power for VSTOR to  
reach VSTOR(CHGEN) and allow normal charging  
to commence  
VSTOR < VSTOR(CHGEN)  
µW  
tBAT_HOT_PLUG  
Time for which switch between VSTOR and  
VBAT_SEC closes when battery is hot plugged  
into VBAT_SEC  
Battery resistance = 300 Ω,  
Battery voltage = 3.3V  
50  
325  
1
ms  
nA  
QUIESCENT and LEAKAGE CURRENTS  
IQ  
EN = GND - Full operating mode  
VIN_DC = 0V; VSTOR = 2.1V; TJ  
= 25°C  
400  
700  
5
VIN_DC = 0V; VSTOR = 2.1V;  
–40°C < TJ < 85°C  
EN = VBAT_SEC - Ship mode  
EN = VBAT_SEC - Ship mode  
VBAT_SEC = VBAT_PRI = 2.1 V;  
TJ = 25°C; VSTOR = VIN_DC = 0  
V
VBAT_SEC = VBAT_PRI = 2.1 V;  
–40°C < TJ < 85°C; VSTOR =  
VIN_DC = 0 V  
20  
5
I-BATPRI(LEAK)  
VBAT_PRI = VBAT_SEC = 2.1 V;  
TJ = 25°C; VIN_DC = 0 V; VSTOR  
floating  
1
nA  
nA  
VBAT_PRI = VBAT_SEC = 2.1 V;  
–40°C < TJ < 85°C; VIN_DC = 0 V;  
VSTOR floating  
20  
MOSFET RESISTANCES  
RDS(ON)-BAT  
ON resistance of switch between VBAT_SEC and VBAT_SEC = 4.2 V  
VSTOR  
0.95  
1.50  
Ω
RDS(ON)_CHG  
Charger low side switch ON resistance  
Charger high side switch ON resistance  
Charger low side switch ON resistance  
Charger high side switch ON resistance  
Maximum charger switching frequency  
VBAT_SEC = 4.2 V  
0.70  
2.30  
0.80  
3.70  
1.0  
0.90  
3.00  
1.00  
4.80  
Ω
Ω
VBAT_SEC = 2.1 V  
Ω
Ω
fSW  
MHz  
C
TTEMP_SD  
Junction temperature when charging is  
discontinued  
VBAT_OV > VSTOR > 1.8V  
125  
Copyright © 2013–2014, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Links :bq25505  
 
 
 复制成功!