XS2206
Electrical characteristics (Ta=25°C unless otherwise specified)
Parameter
Symbol
VBR,
Test Conditions
Min
Typ.
Max.
Units
Breakdown voltage
Blocking voltage
IR=100µA
600
VR
IF=10A
1.35
1.10
1.60
1.40
20
V
Forward voltage
(Per Diode)
VF
IF=10A, Tj =125°C
VR= VRRM
Reverse leakage
IR
µA
current(Per Diode)
200
Tj=150°C, VR=600V
IF=0.5A, IR=1A, IRR=0.25A
35
27
45
35
Reverse recovery
time(Per Diode)
trr
ns
IF=1A,VR=30V, di/dt =200A/us
Thermal characteristics
Paramter
Symbol
Typ
3.0
Units
/
℃ W
Junction-to-Case
RθJC
Electrical performance (typical)
Forward Characteristic(typ.)
100.0
Reverse Characteristic(typ.)
Ta=25
℃
10.0
1.0
0.1
0.0
0.0
Ta=25
℃
Ta=125
℃
Ta=125
℃
10.0
1.0
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1
100
Forward Voltage VF(V)
Reverse Voltage VR(V)
Rev.08T
© 1995 Thinki Semiconductor Co., Ltd.
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