DS_6613_018
78M6613 Data Sheet
4.2 Recommended External Components
Name
C1
From
V3P3A
V3P3D
To
Function
Value
Unit
µF
GNDA Bypass capacitor for 3.3V supply.
GNDD Bypass capacitor for V3P3D.
32.768 kHz crystal – electrically similar to
≥0.1±10%
≥0.1±10%
CSYS
µF
XTAL
XIN
XOUT
ECS .327-12.5-17X or Vishay XT26T, load
capacitance 12.5 pF.
32.768
kHz
CXS †
CXL †
XIN
GND
GND
pF
pF
Load capacitor for crystal (exact value
depends on crystal specifications and
parasitic capacitance of board).
27±10%
27±10%
XOUT
† Depending on trace capacitance, higher or lower values for CXS and CXL must be used. Capacitance from
XIN to GND and XOUT to GND (combining pin, trace and crystal capacitance) should be 35 pF to 37 pF.
4.3 Recommended Operating Conditions
Parameter
Condition
Min
3.0
-40
Typ
Max
3.6
Unit
V
3.3V Supply Voltage (V3P3)
Operating Temperature
Normal Operation
3.3
+85
ºC
4.4 Performance Specifications
4.4.1 Input Logic Levels
Parameter
Condition
Min
Typ
Max
Unit
V
Digital high-level input voltage, VIH
Digital low-level input voltage, VIL
2
0.8
V
Input pull-up current, IIL
E_RXTX,
VIN=0V, ICE_E=1
10
10
-1
100
100
1
µA
µA
µA
E_RST, CKTEST
Other digital inputs
0
0
Input pull down current, IIH
ICE_E
VIN=V3P3
10
-1
100
1
µA
µA
Other digital inputs
4.4.2 Output Logic Levels
Parameter
Condition
Min
Typ
Max
Unit
V3P3
–0.4
ILOAD = 1 mA
V
Digital high-level output voltage VOH
V3P3-
0.61
ILOAD = 15 mA
V
I
LOAD = 1 mA
0
0.4
0.81
V
V
Digital low-level output voltage VOL
ILOAD = 15 mA
1 Guaranteed by design; not production tested.
Rev. 1.1
21
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
