78M6612 Data Sheet
DS_6612_001
5.2 Recommended External Components
Name
C1
From
V3P3A
V3P3D
To
Function
Value
Unit
µF
AGND
DGND
Bypass capacitor for 3.3V supply
Bypass capacitor for 3.3V output
Bypass capacitor for V3P3SYS
Bypass capacitor for V2P5
≥0.1±20%
0.1±20%
≥1.0±30%
0.1±20%
C2
µF
V3P3SYS DGND
CSYS
C2P5
µF
V2P5
DGND
µF
32.768 kHz crystal – electrically similar to
ECS .327-12.5-17X or Vishay XT26T, load
capacitance 12.5 pF
XIN
XOUT
XTAL
32.768
kHz
CXS †
CXL †
27±10%
27±10%
pF
pF
XIN
AGND
AGND
Load capacitor for crystal (exact value
depends on crystal specifications and
parasitic capacitance of board).
XOUT
† Depending on trace capacitance, higher or lower values for CXS and CXL must be used. Capacitance
from XIN to GNDD and XOUT to GNDD (combining pin, trace and crystal capacitance) should be 35 pF
to 37 pF.
5.3 Recommended Operating Conditions
Parameter
Condition
Min
3.0
0
Typ
Max
3.6
Unit
V
3.3V Supply Voltage (V3P3SYS,
V3P3A)
V3P3A and V3P3SYS must be at the
same voltage
Normal Operation
Battery Backup
3.3
3.6
V
No Battery
Externally Connect to V3P3SYS
Battery Backup
BRN and LCD
modes
VBAT
3.0
2.0
3.8
3.8
V
V
SLEEP mode
Operating Temperature
-40
+85
ºC
Maximum input voltage on DIO/SEG
pins configured as DIO input. *
MISSION mode
BROWNOUT mode
LCD mode
V3P3SYS+0.3
VBAT+0.3
VBAT+0.3
V
V
V
*Exceeding this limit will distort the LCD waveforms on other pins.
90
Rev. 1.2
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
