DS_1x66B_001
73M1866B/73M1966B Data Sheet
3.2.3 DC Characteristics
Table 9 lists the 73M1x66B DC characteristics.
Table 9: DC Characteristics
Parameter
Condition
Min
Nom
Max
0.2 ∗ VDD
5.5
Unit
V
Input low voltage
VIL
–
–
-0.5
–
–
–
–
Input high voltage
Output low voltage
Output low voltage
FSB,SCLK,
VIH1
VOL
VOL
0.7 VDD
V
V
–
IOL=4 mA
0.45
–
IOL=1 mA
0.45
V
–
–
Output high voltage
VOH
VOH
IOH=-4 mA
IOH=-1 mA
VDD - 0.45
VDD - 0.45
V
V
Output high voltage
FSB, FSBD, SCLK
–
–
Input low leakage current IIL1
VSS < Vin < VIL1
VIH1 < Vin < 5.5
10
–
40
1
μA
μA
Input high leakage
current
IIH1
IDD current at 3.0 V – 3.6 V Nominal at 3.3 V
–
–
–
–
–
–
–
–
–
–
–
–
Active digital current
Active PLL current
Active analog current
IDD total current*
IDD total current*
IDD current
IDD1dig
IDD1pll
IDD1ana
IDD1
1.0
1.0
12
1.5
1.5
17
20
30
5
mA
mA
mA
mA
mA
μA
15
IDD2
20
IDD3
1.0
PWDN=1
–
–
–
–
IDD current
SLEEP=1 (Ext Ref Clk)
IDD4
IDD6
0.5
1.0
1.0
1.5
mA
mA
IDD current
ENFEH=0 (Ext Ref Clk)
*Note: IDD1 is with the secondary of the barrier left open.
IDD2 is with the secondary of the barrier connected to 73M1916 fully powered.
Rev. 1.6
17
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
