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71M6531D 参数 Datasheet PDF下载

71M6531D图片预览
型号: 71M6531D
PDF下载: 下载PDF文件 查看货源
内容描述: 电能计量IC [Energy Meter IC]
分类和应用:
文件页数/大小: 115 页 / 2363 K
品牌: TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
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FDS 6531/6532 005  
Data Sheet 71M6531D/F-71M6532D/F  
1.3  
Digital Computation Engine (CE)  
The CE, a dedicated 32-bit signal processor, performs the precision computations necessary to accurate-  
ly measure energy. The CE calculations and processes include:  
Multiplication of each current sample with its associated voltage sample to obtain the energy per  
sample (when multiplied with the constant sample time).  
Frequency-insensitive delay cancellation on all four channels (to compensate for the delay between  
samples caused by the multiplexing scheme).  
90° phase shifter (for VAR calculations).  
Pulse generation.  
Monitoring of the input signal frequency (for frequency and phase information).  
Monitoring of the input signal amplitude (for sag detection).  
Scaling of the processed samples based on calibration coefficients.  
Scaling of all samples based on temperature compensation information (71M6532D/F only).  
The CE program resides in flash memory. Common access to flash memory by CE and MPU is con-  
trolled by a memory share circuit. Each CE instruction word is two bytes long. Allocated flash space for  
the CE program cannot exceed 4096 16-bit words (8 KB). The CE program counter begins a pass  
through the CE code each time multiplexer state 0 begins. The code pass ends when a HALT instruction  
is executed. For proper operation, the code pass must be completed before the multiplexer cycle ends  
(see Section 2.2 System Timing Summary).  
The CE program must begin on a 1-KB boundary of the flash address. The I/O RAM register  
CE_LCTN[7:0] defines which 1-KB boundary contains the CE code. Thus, the first CE instruction is lo-  
cated at 1024*CE_LCTN[7:0].  
The CE can access up to 4 KB of data RAM (XRAM), or 1024 32-bit data words, starting at RAM address  
0x0000.  
The XRAM can be accessed by the FIR filter block, the RTM circuit, the CE, and the MPU. Assigned time  
slots are reserved for FIR, and MPU, respectively, to prevent bus contention for XRAM data access.  
The MPU can read and write the XRAM as the primary means of data communication between the two  
processors. Table 4 shows the CE addresses in XRAM allocated to analog inputs from the AFE.  
Table 4: XRAM Locations for ADC Results  
Address (HEX)  
0x00  
Name  
IA  
Description  
Phase A current  
Phase A voltage  
Phase B current  
Phase B voltage  
Not used  
0x01  
VA  
0x02  
IB  
0x03  
VB  
0x04...0x09  
0x0A  
TEMP  
VBAT  
Temperature  
0x0B  
Battery Voltage  
The CE is aided by support hardware to facilitate implementation of equations, pulse counters and accu-  
mulators. This hardware is controlled through I/O RAM locations EQU (equation assist), DIO_PV and  
DIO_PW (pulse count assist) and PRE_SAMPS and SUM_CYCLES (accumulation assist).  
PRE_SAMPS and SUM_CYCLES support a dual level accumulation scheme where the first accumulator  
accumulates results from PRE_SAMPS samples and the second accumulator accumulates up to  
SUM_CYCLES of the first accumulator results. The integration time for each energy output is PRE_SAMPS  
* SUM_CYCLES/2520.6 (with MUX_DIV = 1). The CE hardware issues the XFER_BUSY interrupt when  
the accumulation is complete.  
v1.2  
© 2005-2009 TERIDIAN Semiconductor Corporation  
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