71M6521BE
Energy Meter IC
DATA SHEET
JANUARY 2008
TIMING SPECIFICATIONS
RAM AND FLASH MEMORY
PARAMETER
CONDITION
CKMPU = 4.9MHz
CKMPU = 1.25MHz
MIN
5
2
TYP
MAX
100
2
UNIT
Cycles
Cycles
CE DRAM wait states
CKMPU = 614kHz
1
Cycles
V3P3A=V3P3SYS=0
BROWNOUT MODE
Flash Read Pulse Width
30
ns
Flash write cycles
Flash data retention
Flash data retention
Flash byte writes between page or mass
erase operations
-40°C to +85°C
25°C
85°C
20,000
100
10
Cycles
Years
Years
Cycles
FLASH MEMORY TIMING
PARAMETER
CONDITION
MIN
MIN
TYP
MAX
42
20
UNIT
µs
ms
Write Time per Byte
Page Erase (512 bytes)
Mass Erase
200
ms
EEPROM INTERFACE
PARAMETER
CONDITION
CKMPU=4.9MHz, Using
interrupts
CKMPU=4.9MHz, “bit-
banging” DIO4/5
TYP
MAX
UNIT
78
kHz
Write Clock frequency (I2C)
Write Clock frequency (3-wire)
150
500
kHz
kHz
CKMPU=4.9MHz
RESET
PARAMETER
Reset pulse width
Reset pulse fall time
CONDITION
MIN
5
TYP
MAX
UNIT
µs
µs
1
FOOTNOTES
1This spec is guaranteed, has been verified in production samples, but is not measured in production.
2This spec is guaranteed, has been verified in production samples, but is measured in production only at DC.
3This spec is measured in production at the limits of the specified operating temperature.
4This spec defines a nominal relationship rather than a measured parameter. Correct circuit operation is verified with
other specs that use this nominal relationship as a reference.
Page: 90 of 97
© 2005-2008 TERIDIAN Semiconductor Corporation
V1.0
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
