71M6511/71M6511H
Single-Phase Energy Meter IC
DATA SHEET
AUGUST 2007
RAM AND FLASH MEMORY
PARAMETER
CONDITION
CKMPU = 4.9MHz
CKMPU = 1.25MHz
-40°C to +85°C
85°C
MIN
5
TYP
MAX
UNIT
Cycles
Cycles
Cycles
Years
Years
CE RAM wait states
2
Flash write cycles
20,000
10
100
Flash data retention
Flash data retention
25°C
Flash byte writes between page or mass
erase operations
2
Cycles
FLASH MEMORY TIMING
PARAMETER
CONDITION
MIN
MIN
TYP
MAX
42
UNIT
µs
Write Time per Byte
Page Erase (512 bytes)
Mass Erase
20
ms
200
ms
Flash byte writes between page or mass
erase operations
2
Cycles
EEPROM INTERFACE
PARAMETER
CONDITION
CKMPU=4.9MHz, Using
interrupts
CKMPU=4.9MHz, “bit-
banging” DIO4/5
TYP
MAX
UNIT
78
kHz
Write Clock frequency
150
kHz
FOOTNOTES
1This parameter is has been verified in production samples, but is not measured in production.
2This parameter is has been verified in production samples, but is measured in production only at DC.
3This parameter is measured in production at the limits of the specified operating temperature.
4This parameter defines a nominal relationship rather than a measured parameter. Correct circuit operation is verified with other specs
that use this nominal relationship as a reference.
Recommended External Components
NAME
C1
FROM
V3P3A
V3P3D
TO
FUNCTION
VALUE
UNIT
µF
AGND
DGND
Bypass capacitor for 3.3V supply
≥0.1±20%
≥0.1±20%
C2
Bypass capacitor for 3.3V supply
32.768kHz crystal. Electrically similar to ECS
ECX-3TA series
µF
XTAL
XIN
XOUT
32.768
kHz
CXS
CXL
XIN
AGND
AGND
AGND
pF
pF
pF
nF
µF
µF
Load capacitor for crystal (depends on crystal
22±10%
22±10%
specs and board parasitics).
XOUT
VBIAS
VDRV
V2P5
VLCD
CBIAS
CBST1
C2P5
Bypass capacitor for VBIAS
≥1000±20%
33±20%
External Boost charging capacitor
DGND
DGND
Bypass capacitor for V2P5
Boost bypass capacitor
≥0.1±20%
≥0.22±20%
CBST2
Page: 89 of 95
© 2005-2007 TERIDIAN Semiconductor Corporation
V2.6
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
