71M6403
Electronic Trip Unit
SEPTEMBER 2006
RAM AND FLASH MEMORY
PARAMETER
CE RAM wait states
Flash write cycles
CONDITION
CKMPU = 4.9MHz
MIN
5
20,000
TYP
MAX
UNIT
Cycles
Cycles
Years
Flash data retention
25°C
100
FLASH MEMORY TIMING
PARAMETER
Write Time per Byte
CONDITION
MIN
TYP
MAX
UNIT
42
µs
Read Time: No wait states
Page Erase (512 bytes)
Mass Erase
20
ms
ms
200
EEPROM INTERFACE
PARAMETER
CONDITION
MIN
TYP
MAX
UNIT
CKMPU=4.9MHz,
78
kHz
Using interrupts
Write Clock frequency
CKMPU=4.9MHz,
150
kHz
“bit-banging” DIO4/5
Page: 70 of 75
© 2006 TERIDIAN Semiconductor Corporation
REV 1.0
TERIDIAN [ TERIDIAN SEMICONDUCTOR CORPORATION ]
