TABLE I. Electrical performance characteristics.
Conditions 1/
-55°C ≤ TA ≤ +125°C
Group A
subgroups
Device
type
Limits
Unit
Test
Symbol
rDS(ON)
unless otherwise specified
Min
0
Max
35
Drain-to-source ON
resistance
VIN = 0.8 V
1, 3
2
01
02
03
01
02
03
01
02
03
01
02
03
Ω
V+ = 13.5 V,
0
0
0
0
0
0
0
0
0
0
0
45
35
V- = -13.5 V,
IS = -10 mA,
VD = ±8.5 V
VIN = 2.4 V
1, 3
2
45
VIN = 0.8 V or
2.4 V 2/
1, 3
2
35
45
VIN = 0.8 V
1, 3
2
80
V+ = 10.8 V,
V- = 0 V,
100
80
IS = -10 mA,
VIN = 2.4 V
1, 3
2
VD = 3.0 V and
8.0 V
100
80
VIN = 0.8 V or
2.4 V 2/
1, 3
2
100
+0.25
+20
+0.25
+20
+0.25
+20
+0.25
+20
+0.25
+20
+0.25
+20
Source OFF leakage
current
IS(OFF)
VIN = 0.8 V
1
-0.25
-20
nA
V+ = 16.5 V,
V- = -16.5 V,
VD = -15.5 V
VS = 15.5 V
2, 3
1
VIN = 2.4 V
-0.25
-20
2, 3
1
VIN = 0.8 V or
2.4 V 2/
-0.25
-20
2, 3
1
VIN = 0.8 V
-0.25
-20
V+ = 16.5 V,
V- = -16.5 V,
VD = 15.5 V
VS = -15.5 V
2, 3
1
VIN = 2.4 V
-0.25
-20
2, 3
1
VIN = 0.8 V or
2.4 V 2/
-0.25
-20
2, 3
See footnotes at end of table.
SIZE
STANDARD
5962-90731
A
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43218-3990
REVISION LEVEL
E
SHEET
5
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
