TABLE IIB. Delta limits at +25°C.
|
|
|
|
Device types
All
|
|
|
| Parameter 1/
|
| I
|
| I , I
LI LO
,I
CC2 CC3
| +10% of specified value
| in table I.
| +10% of specified value
|
|
|
|
| in table I.
|
1/ The above parameter shall be recorded
before and after the required burn-in and
life tests to determine the delta.
4.4.4 Group E inspection. Group E inspection is required only for parts intended to be marked as radiation hardness
assured (see 3.5 herein). RHA levels for device classes M, Q and V shall be as specified in MIL-PRF-38535. End-point
electrical parameters shall be as specified in table IIA herein.
4.4.4.1 Total dose irradiation testing. Total dose irradiation testing shall be performed in accordance with MIL-STD-883
method 1019, condition B and as specified herein.
4.4.4.1.1 Accelerated aging test. Accelerated aging tests shall be performed on all devices requiring a RHA level greater
than 5k rads(Si). The post-anneal end-point electrical parameter limits shall be as specified in table IA herein and shall be the
pre-irradiation end-point electrical parameter limit at 25°C ± 5°C. Testing shall be performed at initial qualification and after any
design or process changes which may affect the RHA response of the device.
4.4.4.2 Dose rate induced latchup testing. Dose rate induced latchup testing shall be performed in accordance with test
method 1020 of MIL-STD-883 and as specified herein. Test shall be performed on devices, SEC, or approved test structures at
technology qualification and after any design or process changes which may affect the RHA capability of the process.
4.4.4.3 Dose rate upset testing. Dose rate upset testing shall be performed in accordance with test method 1021 of MIL-
STD-883 and herein.
a.Transient dose rate upset testing shall be performed at initial qualification and after any design or process changes
which may affect the RHA performance of the devices. Test 10 devices with 0 defects unless otherwise specified.
b.Transient dose rate upset testing for class Q and V devices shall be performed as specified by a TRB approved radiation
hardness assurance plan and MIL-PRF-38535.
4.4.4.4 Single event phenomena (SEP). SEP testing shall be required on class V devices. SEP testing shall be performed
on the Standard Evaluation Circuit (SEC) or alternate SEP test vehicle as approved by the qualifying activity at initial
qualification and after any design or process changes which may affect the upset or latchup characteristics. Test four devices
with zero failures. ASTM standard F1192 may be used as a guideline when performing SEP testing. The test conditions for
SEP are as follows:
a.The ion beam angle of incidence shall be normal to the die surface and 60 degrees to the normal, inclusive (i.e., 0° <
angle < 60°). No shadowing of the ion beam due to fixturing or package related effects is allowed.
b.The fluence shall be greater than 100 errors or > 107 ions/cm2.
c. The flux shall be between 102 and 105 ion/cm2/s. The cross section shall be verified to be flux independent by measuring
the cross section at two flux rates which differ by at least an order of magnitude.
d.The particle range shall be > 20 microns in silicon.
e.The test temperature shall be +25°C and the maximum rated operating temperature +10°C.
f. Bias conditions shall be VDD = 3.14 V dc for the upset measurements and VDD = 3.46 V dc for the latchup measurements.
g.Test four devices with zero failures.
h.SEP test limits shall be maintained by the manufacturer under document revision level control and shall be made
available to the preparing or acquiring activity upon request.
SIZE
STANDARD
5962-89568
MICROCIRCUIT DRAWING
A
REVISION LEVEL
H
SHEET
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
30
DSCC FORM 2234
APR 97
TEMIC [ TEMIC SEMICONDUCTORS ]
