TABLE I. Electrical performance characteristics Continued.
Test
Symbol
Conditions
-55°C
≤
TC
≤
+125°C
V
SS
= 0 V
4.5 V
≤
VCC
≤
5.5 V
unless otherwise specified
C
L
= 30 pF,
See figures 4 and 5
Group A
subgroups
Device
type
Limits
Min
01
02-04
05
06
07,08
Max
35
30
25
20
15
2/
01
02
03
04
05
06
07
08
140
100
80
65
50
40
30
25
2/
01
02
03
04
05
06
07
08
120
80
65
50
40
30
20
15
2/
01-02
03-04
05-08
9 1/
9,10,11
01,02
03,04
05
06
07
08
20
15
10
2/
40
30
20
18
12
9
2/
ns
Unit
9,10,11
Read pulse high to
data bus high Z
t
RHZ
3/
ns
M, D
Write cycle time
t
WC
C
L
= 30 pF,
See figures 4 and 5
9 1/
9,10,11
ns
M, D
t
WPW
Write pulse width
C
L
= 30 pF,
See figures 4 and 5
9 1/
9,10,11
ns
M, D
Write recovery time
t
WR
C
L
= 30 pF,
See figures 4 and 5
M, D
t
DS
Data setup time
C
L
= 30 pF,
See figures 4 and 5
9 1/
9,10,11
ns
M, D
See footnotes at end of table.
9 1/
STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
DSCC FORM 2234
APR 97
SIZE
A
REVISION LEVEL
H
5962-89568
SHEET
9
TEMIC [ TEMIC SEMICONDUCTORS ]
