SILICON PIN DIODES
Square ceram ic surface m ountable PIN diodes
Electrical characteristics
Low voltage PIN diodes
Breakdow n
Total
capacitance
Forward
series resistance
Minority
carrier
V
br
(V)
Ct (pF)
R
(Ω)
t l (µs)
sf
Test
conditions
Vr = 50 V
f = 1 MHz
If = 50 m A
f = 120 MHz
m ax.
If = 10 m A
Ir = 6 m A
m in.
Ir = 10 µA
Type
m in.
typ.
m ax.
DH50209
200
1.00
1.20
0.25
2.00
Medium voltage PIN diodes
Applicable Breakdow n Total capacitance
Forward series
resistance Rsf
Minority
carrier
τl (µs)
Max. power
dissipation
25° C
voltage V
(V)
Vbr
(V)
Ct
(pF)
(Ω)
Test
conditions
Type
DH80050
DH80051
DH80052
DH80053
DH80054
DH80055
I < 10 µA
Ir = 10 µA
Vr = 50 V
f = 1MHz
I= 100mA I= 200 mA If= 10mA Contact Free
f= 120MHz f= 120 MHz Ir= 6mA surface air
W (1) W (2)
m ax.
500
500
500
500
500
500
typ.
550
550
550
550
550
550
typ.
m ax.
0.45
0.65
1.05
1.20
1.35
1.55
m ax.
m in.
1.1
0.40
0.55
0.85
1.05
1.25
1.45
0.70
0.60
0.40
0.35
0.30
0.28
0.65
0.55
0.35
0.30
0.27
0.25
3.0
3.5
4.0
4.0
4.5
4.5
1.2
1.2
1.2
1.5
1.5
1.5
1.5
2.0
2.5
3.0
3.5
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
12-13
Vol. 1
SALES OFFICES : VIS IT OUR WEB S ITE AT
h tt p ://w w w .t e m ex.n e t
TEMEX [ TEMEX ]
