SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
MICROWAVE
Medium voltage PIN diodes
Applicable Breakdown Total capacitance
Forward series
voltage V
Vbr
Ct
resistance Rsf
(V)
(V)
(pF)
(Ω)
I < 10 µA
Ir = 10 µA
Vr = 50 V
I=100mA I=200 mA
f = 1MHz
f=120MHz f=120 MHz
max.
typ.
typ.
max.
max.
800
850
0.90
1.00
0.40
0.35
1000
1100
0.55
0.65
0.70
0.60
1000
1100
0.85
1.30
0.50
0.35
1000
1100
1.25
2.00
0.35
0.30
Minority
Max. power
carrier
dissipation
t
(µs)
l
25° C
If=10mA Contact Free
Ir=6mA surface
air
min.
W (1) W (2)
3.00
TBD
TBD
3.00
TBD
TBD
4.00
TBD
TBD
7.00
TBD
TBD
Test
conditions
Type
DH80082
DH80100
DH80102
DH80106
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
Temperature ranges
Operating junction (Tj)
Storage
:
:
-55° C to +150° C
-65° C to +150° C
Series Resistance vs. Forward Current
R
SF
(Ω)
100
10
DH80052
DH80050
1
0
0.1
10
100
I (mA)
1000
Series Resistance vs. Forward Current
R
SF
(Ω)
100
10
DH80053
DH80051
1
0
0.1
10
100
I (mA)
1000
1-14
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