SILICON PIN DIODES
Square ceramic surface mountable PIN diodes
MICROWAVE
Electrical characteristics
Low voltage PIN diodes
Breakdown
Vbr
(V)
Test
conditions
Type
DH50107
DH50205
DH50206
DH50207
DH50209
Ir = 10 µA
min.
100
200
200
200
200
Total
capacitance
Ct (pF)
Vr = 6 V
f = 1 MHz
typ.
max.
0.64
0.84
0.41
0.47
0.47
0.64
0.64
0.84
1.00
1.20
Forward
series resistance
Rsf (Ω)
If = 10 mA
f = 120 MHz
max.
0.60
1.00
0.80
0.70
0.25 (1)
Minority
carrier
t l (µs)
If = 10 mA
Ir = 6 mA
min.
0.50
0.80
0.95
1.00
2.00
Max. power
dissipation
25°C
Contact
surface
W (2)
TBD
TBD
TBD
TBD
TBD
Free
air
W (3)
TBD
TBD
TBD
TBD
TBD
(1) Rsf at If = 50 mA
(2) Diode brazed on infinite copper heat sink
(3) Diode brazed on Epoxy circuit (PCB)
Medium voltage PIN diodes
Applicable Breakdown Total capacitance
Forward series
Minority
Max. power
voltage V
Vbr
Ct
resistance Rsf
carrier
dissipation
(V)
(V)
(pF)
(Ω)
τl
(µs)
25° C
I < 10 µA
Ir = 10 µA
Vr = 50 V
I= 100mA I= 200 mA If= 10mA Contact Free
f = 1MHz
f= 120MHz f= 120 MHz Ir= 6mA surface
air
max.
typ.
typ.
max.
max.
min.
W (1) W (2)
500
550
0.40
0.45
0.70
0.65
1.1
3.0
1.2
500
550
0.55
0.65
0.60
0.55
1.5
3.5
1.2
500
550
0.85
1.05
0.40
0.35
2.0
4.0
1.2
500
550
1.05
1.20
0.35
0.30
2.5
4.0
1.5
500
550
1.25
1.35
0.30
0.27
3.0
4.5
1.5
500
550
1.45
1.55
0.25
0.22
3.5
4.5
1.5
Test
conditions
Type
DH80050
DH80051
DH80052
DH80053
DH80054
DH80055
(1) Diode brazed on infinite copper heat sink
(2) Diode brazed on Epoxy circuit (PCB)
1-13
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