100mA CHARGE PUMP DC-TO-DC
VOLTAGECONVERTER
TC660
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposuretoabsolutemaximumratingconditionsforextendedperiodsmay
affect device reliability.
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ........................................................... +6V
LV, FC, OSC Input
Voltage (Note 1) ....................... VOUT – 0.3V to (V+ +0.3V)
Current Into LV (Note 1) ...................... 20 µA for V+ >3.5V
Output Short Duration (VSUPPLY ≤ 5.5V) (Note 3) ..10 Sec
Power Dissipation (Note 2) (TA ≤ 70°C)
SOIC ...............................................................470mW
Plastic DIP ......................................................730mW
Operating Temperature Range
C Suffix .................................................. 0°C to +70°C
E Suffix ............................................. – 40°C to +85°C
Storage Temperature Range ................ – 65°C to +150°C
Lead Temperature (Soldering, 10 sec) ................. +300°C
ELECTRICAL CHARACTERISTICS: Specifications Measured Over Operating Temperature Range With,
V+ = 5V, COSC = Open, C1, C2 = 150µF, FC = Open, Test Circuit
(Figure 1), unless otherwise indicated.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
I+
Supply Current
RL = ∞
FC pin = OPEN or GND
FC pin = V+
—
—
200
1
500
3
µA
mA
V+
Supply Voltage Range
LV = HIGH, RL = 1 kΩ
LV = GND, RL = 1 kΩ
LV = OUT, RL = 1 kΩ (Figure 9)
IOUT = 100mA
3
—
—
5.5
5.5
5.5
10
V
1.5
2.5
—
—
ROUT
IOUT
Output Source Resistance
Output Current
6.5
—
Ω
VOUT < – 4V
100
—
mA
kHz
FOSC
Oscillator Frequency
Pin 7 open; Pin 1 open or GND
Pin 1 = V+
—
—
10
90
—
—
+
+
IOSC
PEFF
Input Current
Pin 1 open
Pin 1 = V+
—
—
1.1
5
—
—
µA
Power Efficiency (Note 4)
RL = 1 kΩ connected between V+ & VOUT
RL = 500Ω connected between VOUT & GND
IL = 100mA to GND
96
92
—
98
96
88
—
—
—
%
VOUT EFF
Voltage Conversion Efficiency
RL = ∞
99
99.9
—
%
NOTES: 1. Connecting any input terminal to voltages greater than V+ or less than GND may cause destructive latch-up. It is recommended that no
inputs from sources operating from external supplies be applied prior to "power up" of the TC660.
2. Derate linearly above 50°C by 5.5 mW/°C.
3. To prevent damaging the device, do not short VOUT to V+.
4. To maximize output voltage and efficiency performance, use low ESR capacitors for C1 and C2.
4-6
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
