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TC4469 参数 Datasheet PDF下载

TC4469图片预览
型号: TC4469
PDF下载: 下载PDF文件 查看货源
内容描述: 逻辑输入CMOS Quad驱动程序 [LOGIC-INPUT CMOS QUAD DRIVERS]
分类和应用: 输入元件驱动
文件页数/大小: 9 页 / 121 K
品牌: TELCOM [ TELCOM SEMICONDUCTOR, INC ]
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LOGIC-INPUT CMOS
QUAD DRIVERS
TC4467
TC4468
TC4469
ABSOLUTE MAXIMUM RATINGS*
Supply Voltage ......................................................... +20V
Input Voltage ......................... (GND – 5V) to (V
DD
+ 0.3V)
Maximum Chip Temperature
Operating ........................................................ +150°C
Storage ............................................. – 65° to +150°C
Maximum Lead Temperature
(Soldering, 10 sec) ......................................... +300°C
Operating Ambient Temperature Range
C Device .................................................. 0° to +70°C
E Device ............................................. – 40° to +85°C
M Device ........................................... – 55° to +125°C
Package Power Dissipation (T
A
70°C)
14-Pin CerDIP ................................................840mW
14-Pin Plastic DIP ...........................................800mW
16-Pin Wide SOIC ..........................................760mW
Package Thermal Resistance
14-Pin CerDIP
R
θJ-A
......................................
100°C/W
R
θJ-C
.........................................
23°C/W
14-Pin Plastic DIP R
θJ-A
.........................................
80°C/W
R
θJ-C
.........................................
35°C/W
16-Pin Wide SOIC R
θJ-A
.........................................
95°C/W
R
θJ-C
.........................................
28°C/W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
ELECTRICAL CHARACTERISTICS:
Measured at T
A
= +25°C with 4.5V
V
DD
18V, unless otherwise specified.
Symbol
Input
V
IH
V
IL
I
IN
Logic 1, High Input Voltage
Logic 0, Low Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance
Peak Output Current
Continuous Output Current
Latch-Up Protection
Withstand Reverse Current
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Power Supply Voltage
Note 3
Note 3
0V
V
IN
V
DD
I
LOAD
= 100µA (Note 1)
I
LOAD
= 10mA (Note 1)
I
OUT
= 10mA, V
DD
= 18V
Single Output
Total Package
4.5V
V
DD
16V
2.4
0
–1
V
DD
– 0.025
500
10
1.2
V
DD
0.8
1
0.15
15
300
500
V
V
µA
V
V
A
mA
mA
Parameter
Test Conditions
Min
Typ
Max
Unit
Output
V
OH
V
OL
R
O
I
PK
I
DC
I
Switching Time
t
R
t
F
t
D1
t
D2
I
S
V
DD
Figure 1
Figure 1
Figure 1
Figure 1
4.5
15
15
40
40
1.5
25
25
75
75
4
18
nsec
nsec
nsec
nsec
mA
V
Power Supply
Note 2
TRUTH TABLE
Part No.
INPUTS A
INPUTS B
OUTPUTS TC446X
H = High
4-262
L = Low
TC4467 NAND
H
H
L
H
L
H
L
H
H
L
L
H
H
H
H
TC4468 AND
H
L
L
L
H
L
L
L
L
TC4469 AND/INV
H
H
L
H
L
H
L
H
L
L
L
L
TELCOM SEMICONDUCTOR, INC.