9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
ELECTRICAL CHARACTERISTICS (cont.):
Symbol
Input
V
IH
V
IL
I
IN
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Rise Time
Fall Time
Delay Time
Delay Time
Power Supply Current
Operating Input Voltage
2.4
—
– 10
V
DD
– 0.025
—
—
—
—
—
—
—
—
—
4.5
—
—
—
—
—
2.4
1.8
60
60
50
65
0.45
0.06
—
—
0.8
10
—
0.025
3.6
2.7
120
120
80
80
3
0.2
18
V
V
µA
V
V
W
W
nsec
nsec
nsec
nsec
mA
V
1
Measured over operating temperature range with 4.5V
≤
V
S
≤
18V unless otherwise specified.
Parameter
Test Conditions
Min
Typ
Max
Unit
2
3
4
5
0V
≤
V
IN
≤
V
DD
See Figure 1
See Figure 1
V
DD
= 18V, I
O
= 10 mA
V
DD
= 18V, I
O
= 10 mA
Figure 1, C
L
= 10,000 pF
Figure 1, C
L
= 10,000 pF
Figure 1
Figure 1
V
IN
= 3V
V
IN
= 0V
Output
V
OH
V
OL
R
O
R
O
t
R
t
F
t
D1
t
D2
Switching Time (Note 1)
Power Supply
I
S
V
DD
NOTE:
1. Switching times guaranteed by design.
V
DD
= 18V
0.1
µF
1
0.1
µF
2
6
7
8
0.1
µF
+5V
90%
INPUT
0V
INPUT
OUTPUT
6
t
R
10%
t
D1
t
F
t
D2
+18V
90%
90%
OUTPUT
C L = 10,000 pF
TC4421
4
5
0V
10%
10%
7
INPUT:
100 kHz, square wave,
t
RISE
= t
FALL
≤
10nsec
Figure 1. Switching Time Test Circuit
8
4-233
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
