9A HIGH-SPEED MOSFET DRIVERS
TC4421
TC4422
ABSOLUTE MAXIMUM RATINGS*
Power Dissipation, T
A
≤
70°C
PDIP ..................................................................730W
CerDIP ............................................................800mW
5-Pin TO-220 ......................................................1.6W
Power Dissipation, T
A
≤
70°C
5-Pin TO-220 (With Heat Sink) .........................1.60W
Derating Factors (To Ambient)
PDIP ............................................................. 8mW/°C
CerDIP ....................................................... 6.4mW/°C
5-Pin TO-220 .............................................. 12mW/°C
Thermal Impedance (To Case)
5-Pin TO-220 R
QJ-C .....................................................
10°C/W
Storage Temperature ............................ – 65°C to +150°C
Operating Temperature (Chip) ................................ 150°C
Operating Temperature (Ambient)
C Version ............................................... 0°C to +70°C
E Version .......................................... – 40°C to +85°C
M Version ....................................... – 55°C to +125°C
Lead Temperature (10 sec) ..................................... 300°C
Supply Voltage ............................................................20V
Input Voltage .......................... (V
DD
+ 0.3V) to (GND - 5V)
Input Current (V
IN
> V
DD
) ........................................ 50 mA
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under "Absolute Maximum Ratings" may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operation sections of the specifications is not implied.
Exposure to absolute maximum rating conditions for extended periods may
affect device reliability.
ELECTRICAL CHARACTERISTICS:
T
A
= 25°C with 4.5V
≤
V
DD
≤
18V unless otherwise specified.
Symbol
Input
V
IH
V
IL
I
IN
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
2.4
—
– 10
1.8
1.3
—
—
0.8
10
V
V
µA
Parameter
Test Conditions
Min
Typ
Max
Unit
0V
≤
V
IN
≤
V
DD
Output
V
OH
V
OL
R
O
R
O
I
PK
I
DC
I
REV
High Output Voltage
Low Output Voltage
Output Resistance, High
Output Resistance, Low
Peak Output Current
Continuous Output Current
Latch-Up Protection
See Figure 1
See Figure 1
V
DD
= 18V, I
O
= 10 mA
V
DD
= 18V, I
O
= 10 mA
V
DD
= 18V
10V
≤
V
DD
≤
18V, T
C
= 25°
(TC4421/22 CAT only)
Duty Cycle
≤
2%
Withstand Reverse Current
V
DD
– 0.025
—
—
—
—
2
>1500
t
≤
300
µsec
—
—
1.4
0.9
9
—
0.025
—
1.7
—
V
V
Ω
Ω
A
A
mA
—
—
Switching Time
(Note 1)
t
R
t
F
t
D1
t
D2
Rise Time
Fall Time
Delay Time
Delay Time
Figure 1, C
L
= 10,000 pF
Figure 1, C
L
= 10,000 pF
Figure 1
Figure 1
—
—
—
—
60
60
30
33
75
75
60
60
nsec
nsec
nsec
nsec
Power Supply
I
S
V
DD
Power Supply Current
Operating Input Voltage
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Current
V
IN
= 3V
V
IN
= 0V
—
—
4.5
2.4
—
– 10
0.2
55
—
—
—
—
1.5
150
18
—
0.8
10
mA
µA
V
V
V
µA
Input
V
IH
V
IL
I
IN
4-232
0V
≤
V
IN
≤
V
DD
TELCOM SEMICONDUCTOR, INC.
TELCOM [ TELCOM SEMICONDUCTOR, INC ]
