Diac
Data Sheets
+8
+6
+4
+2
0
47 k
*
100 k
D.U.T.
HT Series
R
L
ST Series
C
T
V
C
-2
-4
-6
-8
O.1 µF
I
L
20 Ω
1%
120 V rms
60 Hz
-40 -20
0
+20 +40 +60 +80 +100 +120 +140
* Adjust for one firing in each half cycle. D.U.T. = Diac
Junction Temperature (TJ) – ˚C
Figure E8.3 Normalized VBO Change versus Junction Temperature
Figure E8.5 Circuit Used to Measure Diac Characteristics
(Refer to Figure E8.4.)
VC
300
250
200
+VBO
∆V+
t
0
∆V-
ice)
-VBO
150
35 V Dev
IL
100
50
0
Typical (
+IPK
0
t
.01 .02 .03 .04 .05 .06 .07 .08 .09 .10
-IPK
Triggering Capacitance (CT) – µF
Typical pulse base width is 10 µs
Figure E8.4 Test Circuit Waveforms (Refer to Figure E8.5.)
Figure E8.6 Peak Output Current versus Triggering Capacitance
(Per Figure E8.5 with RL of 20 Ω)
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E8 - 4
2002 Teccor Electronics
Thyristor Product Catalog
TECCOR [ TECCOR ELECTRONICS ]
