Data Sheets
Sensitive SCRs
l2t
V
I
I
V
GRM
P
P
I
t
t
q
(9)
dv/dt
di/dt
GT
(4) (12) (22)
H
GM
(17)
GM
(17)
G(AV)
TSM
(6) (13)
gt
(8)
(5) (19)
Volts
TC
Volts/µSec
TC
=
=
TC =
mAmps
Amps
Volts
Watts
Watts
Amps
Amps/µSec
µSec
µSec
Amps2Sec
-40 °C
25 °C
MAX
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
0.8
110 °C
TC = 110 °C
MAX
6
MIN
6
60/50 Hz
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
100/83
TYP
10
8
TYP
4
MAX
50
50
50
45
45
45
50
50
50
45
45
45
50
50
50
45
45
45
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
100
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
41
6
6
4
6
6
8
4
8
6
10
8
5
8
6
5
8
6
8
5
6
6
10
8
4
6
6
4
6
6
8
4
8
6
10
8
5
8
6
5
8
6
8
5
6
6
10
8
4
6
6
4
6
6
8
4
8
6
10
8
5
8
6
5
8
6
8
5
(10) Test condition is maximum rated RMS current except TO-92
devices are 1.2 APK; T106/T107 devices are 4 APK
Electrical Specifications Notes
.
(1) See Figure E5.1 through Figure E5.9 for current ratings at
(11) See package outlines for lead form configurations. When ordering
specified operating temperatures.
(2) See Figure E5.10 for IGT versus TC or TL.
special lead forming, add type number as suffix to part number.
(12) VD = 6 V dc, RL = 100 Ω (See Figure E5.19 for simple test circuit
for measuring gate trigger voltage and gate trigger current.)
(3) See Figure E5.11 for instantaneous on-state current (iT) versus on-
state voltage (vT) TYP.
(13) See Figure E5.1 through Figure E5.9 for maximum allowable case
temperature at maximum rated current.
(4) See Figure E5.12 for VGT versus TC or TL.
(5) See Figure E5.13 for IH versus TC or TL.
(6) For more than one full cycle, see Figure E5.14.
(7) 0.8 A to 4 A devices also have a pulse peak forward current on-
state rating (repetitive) of 75 A. This rating applies for operation at
60 Hz, 75 °C maximum tab (or anode) lead temperature, switching
from 80 V peak, sinusoidal current pulse width of 10 µs minimum,
15 µs maximum. See Figure E5.20 and Figure E5.21.
(14) IGT = 500 µA maximum at TC = -40 °C for T106 devices
(15) IH = 10 mA maximum at TC = -65 °C for 2N5064 Series and
2N6565 Series devices
(16) IH = 6 mA maximum at TC = -40 °C for T106 devices
(17) Pulse Width ≤10 µs
(18) IGT = 350 µA maximum at TC = -65 °C for 2N5064 Series and
2N6565 Series devices
(8) See Figure E5.15 for t versus I
.
GT
gt
(19) Latching current can be higher than 20 mA for higher IGT types.
Also, latching current can be much higher at -40 °C. See Figure
E5.18.
(9) Test conditions as follows:
– TC or TL ≤80 °C, rectangular current waveform
– Rate-of-rise of current ≤10 A/µs
(20) TC or TL = TJ for test conditions in off state
– Rate-of-reversal of current ≤5 A/µs
(21) IDRM and IRRM = 50 µA for 2N5064 and 100 µA for 2N6565 at
– ITM = 1 A (50 µs pulse), Repetition Rate = 60 pps
– VRRM = Rated
125 °C
– VR = 15 V minimum, VDRM = Rated
(22) TO-92 devices specified at -65 °C instead of -40 °C
(23) TC = 110 °C
– Rate-of-rise reapplied forward blocking voltage = 5 V/µs
– Gate Bias = 0 V, 100 Ω (during turn-off time interval)
©2002 Teccor Electronics
Thyristor Product Catalog
E5 - 5
http://www.teccor.com
+1 972-580-7777
TECCOR [ TECCOR ELECTRONICS ]
