Triacs
Data Sheets
Part Number
I
V
I
I
DRM
T(RMS)
Isolated
Non-isolated
DRM
GT
(4) (16)
(1)
(3) (7) (15)
(1) (16)
MT2
MT2
MT1
MT2
MT2
G
MT2
MT1
T
MT1
Gate
G
G
MT1
MT1
MT2
mAmps
mAmps
MT2
MT2
TO-3
TO-263
D2Pak
TC
=
TC
=
TC =
Fastpak
TO-220
TO-202
TO-220
Volts
QI
QII QIII QIV QIV 25 °C 100 °C 125 °C
MAX
MAX
See “Package Dimensions” section for variations. (11)
MIN
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
200
400
600
800
1000
600
800
600
800
TYP
MAX
1
1
1
1
Q2010L4
Q4010L4
Q2010R4
Q4010R4
Q6010R4
Q8010R4
QK010R4
Q2010R5
Q4010R5
Q6010R5
Q8010R5
QK010R5
Q2015R5
Q4015R5
Q6015R5
Q8015R5
QK015R5
Q2025R5
Q4025R5
Q6025R5
Q8025R5
QK025R5
Q2010N4
Q4010N4
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
25
25
25
25
25
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
50
0.05
0.05
0.05
0.1
Q6010L4
Q8010L4
QK010L4
Q2010L5
Q4010L5
Q6010L5
Q8010L5
QK010L5
Q2015L5
Q4015L5
Q6015L5
Q8015L5
QK015L5
Q6010N4
Q8010N4
QK010N4
Q2010N5
Q4010N5
Q6010N5
Q8010N5
QK010N5
Q2015N5
Q4015N5
Q6015N5
Q8015N5
QK015N5
Q2025N5
Q4025N5
Q6025N5
Q8025N5
QK025N5
10 A
0.1
3
Q2010F51
Q4010F51
Q6010F51
75
75
75
75
75
0.05
0.05
0.05
0.1
0.5
0.5
0.5
0.5
3
0.5
0.5
0.5
1
3
1
1
1
2
2
2
2
0.1
0.05
0.05
0.05
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
3
15 A
3
3
3
3
1
3
25 A
35 A
Q6025P5
Q8025P5
Q6035P5
Q8035P5
120
120
120
120
5
5
5
5
V
V
V
— Repetitive peak blocking voltage
DRM
Specific Test Conditions
— DC gate trigger voltage; VD = 12 V dc; RL = 60 Ω
GT
TM
di/dt — Maximum rate-of-change of on-state current; IGT = 200 mA with
— Peak on-state voltage at maximum rated RMS current
≤0.1 µs rise time
dv/dt — Critical rate-of-rise of off-state voltage at rated VDRM gate open
General Notes
dv/dt(c) — Critical rate-of-rise of commutation voltage at rated VDRM
and IT(RMS) commutating di/dt = 0.54 rated IT(RMS)/ms; gate
unenergized
•
All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless specified otherwise.
2
I t — RMS surge (non-repetitive) on-state current for period of 8.3 ms
•
Operating temperature range (TJ) is -65 °C to +125 °C for TO-92,
-25 °C to +125 °C for Fastpak, and -40 °C to +125 °C for all other
devices.
for fusing
I
I
— Peak off-state current, gate open; VDRM = maximum rated value
DRM
— DC gate trigger current in specific operating quadrants;
•
Storage temperature range (TS) is -65 °C to +150 °C for TO-92,
-40 °C to +150 °C for TO-202, and -40 °C to +125 °C for all other
devices.
GT
VD = 12 V dc
I
I
I
I
— Peak gate trigger current
— Holding current (DC); gate open
GTM
•
•
Lead solder temperature is a maximum of 230 °C for 10 seconds,
maximum; ≥1/16" (1.59 mm) from case.
The case temperature (TC) is measured as shown on the dimen-
sional outline drawings. See “Package Dimensions” section of this
catalog.
H
— RMS on-state current conduction angle of 360°
T(RMS)
— Peak one-cycle surge
TSM
P
P
— Average gate power dissipation
— Peak gate power dissipation; IGT ≤ IGTM
G(AV)
GM
t
— Gate controlled turn-on time; IGT = 200 mA with 0.1 µs rise time
gt
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©2002 Teccor Electronics
Thyristor Product Catalog
TECCOR [ TECCOR ELECTRONICS ]
