TSL2571
LIGHT-TO-DIGITAL CONVERTER
TAOS117A − FEBRUARY 2011
Operating Characteristics, VDD = 3 V, TA = 25ꢁ C (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN
TYP
175
65
MAX
UNIT
Active
Wait mode
250
I
Supply current
μA
DD
2
Sleep mode — no I C activity
3 mA sink current
2.5
4
0.4
0.6
5
0
0
V
I
INT, SDA output low voltage
V
OL
6 mA sink current
Leakage current, SDA, SCL, INT pins
−5
μA
LEAK
TSL25711, TSL25715
TSL25713, TSL25717
TSL25711, TSL25715
TSL25713, TSL25717
0.7 V
DD
V
SCL, SDA input high voltage
SCL, SDA input low voltage
V
V
IH
IL
1.25
0.3 V
DD
V
0.54
ALS Characteristics, VDD = 3 V, TA = 25ꢁ C, Gain = 16, AEN = 1 (unless otherwise noted)
(Notes 1 ,2, 3)
PARAMETER
TEST CONDITIONS
CHANNEL
CH0
MIN
TYP
1
MAX
5
UNIT
0
0
E = 0, AGAIN = 120×,
e
Dark ADC count value
counts
ATIME = 0xDB (100 ms)
CH1
1
5
ADC integration time step size
ADC Number of integration steps
ADC counts per step
ATIME = 0xFF
2.58
1
2.72
2.9
256
ms
steps
ATIME = 0xFF
ATIME = 0xC0
0
1024 counts
65535 counts
6000
ADC count value
0
2
CH0
CH1
CH0
CH1
4000
5000
790
λ = 625 nm, E = 171.6 μW/cm ,
p
e
ATIME = 0xF6 (27 ms) See note 2.
ADC count value
counts
6000
2
4000
5000
2800
λ = 850 nm, E = 219.7 μW/cm ,
p
e
ATIME = 0xF6 (27 ms) See note 3.
λ = 625 nm, ATIME = 0xF6 (27 ms) See note 2.
10.8
41
15.8
56
20.8
%
p
ADC count value ratio: CH1/CH0
Irradiance responsivity
λ = 850 nm, ATIME = 0xF6 (27 ms) See note 3.
p
68
CH0
29.1
4.6
λ = 625 nm, ATIME = 0xF6 (27 ms)
p
counts/
See note 2.
CH1
CH0
CH1
(μW/
R
e
22.8
12.7
2
λ = 850 nm, ATIME = 0xF6 (27 ms)
p
cm )
See note 3.
8×
16×
120×
−10
10
Gain scaling, relative to 1× gain
−10
−10
10
10
%
setting
NOTES: 1. Optical measurements are made using small-angle incident radiation from light-emitting diode optical sources. Visible 625 nm LEDs
and infrared 850 nm LEDs are used for final product testing for compatibility with high-volume production.
2. The 625 nm irradiance E is supplied by an AlInGaP light-emitting diode with the following typical characteristics: peak wavelength
e
λp = 625 nm and spectral halfwidth Δλ½ = 20 nm.
3. The 850 nm irradiance E is supplied by a GaAs light-emitting diode with the following typical characteristics: peak wavelength
e
λp = 850 nm and spectral halfwidth Δλ½ = 42 nm.
Copyright E 2011, TAOS Inc.
The LUMENOLOGY r Company
r
r
4
www.taosinc.com
TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
