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CC1110FX 参数 Datasheet PDF下载

CC1110FX图片预览
型号: CC1110FX
PDF下载: 下载PDF文件 查看货源
内容描述: 低功耗低于1 GHz的射频系统级芯片(SoC )与MCU,存储器,收发器和USB控制器 [Low-power sub-1 GHz RF System-on-Chip (SoC) with MCU, memory, transceiver, and USB controller]
分类和应用: 存储射频控制器
文件页数/大小: 240 页 / 2823 K
品牌: TAOS [ TEXAS ADVANCED OPTOELECTRONIC SOLUTIONS ]
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CC1110Fx / CC1111Fx  
Parameter  
Min  
Typ  
Max  
Unit  
Condition/Note  
Spurious emissions  
radiated,  
Harmonics not  
included  
Measured on CC1110EM reference designs ([1], [2] and [3])  
with 10 dBm CW, TX frequency at 315.00 MHz, 433.00 MHz,  
868.00 or 915.00 MH. For CC1111Fx see DN016 [14]  
Please refer to register TEST1on page 222 for required  
settings in RX and TX  
315 MHz  
433 MHz  
< -58  
< -53  
dBm  
dBm  
Frequencies below 960 MHz  
Frequencies above 960 MHz  
< -50  
< -54  
< -56  
Frequencies below 1 GHz  
Frequencies above 1 GHz  
Frequencies within 47-74, 87.5-118, 174-230, 470-862 MHz  
868 MHz  
915 MHz  
Frequencies below 1 GHz  
Frequencies above 1 GHz  
Frequencies within 47-74, 87.5-118, 174-230, 470-862  
MHz.  
< -56  
< -54  
< -56  
dBm  
dBm  
< -51  
< -60  
Frequencies below 960 MHz  
Frequencies above 960 MHz  
Table 10: RF Transmit Section  
Output power (10dBm), variation over frequency and temperature  
12  
11  
10  
9
Avg -40degC  
Avg 25degC  
Avg 85degC  
8
7
6
750  
800  
850  
900  
950  
Frequency [MHz]  
Figure 3: Typical Variation in Output Power over Frequency and Temperature  
(+10 dBm output power)  
SWRS033E  
Page 19 of 239  
 
 
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