TAK CHEONG
TYPICAL CHARACTERISTICS
®
SEM ICON DU CTO R
Figure 1. Forward Current Derating Curve (Per Diode)
10
1000.0
Figure 2. Junction Capacitance (Per Diode)
f = 1MHz
Average Forward Current [A]
Ta = 25
℃
Typical Junction Capacitance
[pF]
8
6
MBR10100CT
100.0
MBR10150CT
4
2
MBR10200CT
0
0
25
50
75
100
125
150
10.0
0
5
10
15
20
25
30
35
40
Tc - Case Tem perature [
℃
]
Reverse Voltage [V]
Figure 3. MBR10100CTTypical Reverse Current (Per Diode)
10000.000
Figure 4. MBR10150CTTypical Reverse Current (Per Diode)
1000.000
IR - Reverse Curretn [uA]
Ta= 150
℃
Ta=125
℃
IR - Reverse Current [uA])
1000.000
100.000
Ta= 150
℃
Ta=125
℃
100.000
10.000
10.000
Ta=75
℃
1.000
1.000
Ta=75
℃
0.100
0.100
Ta=25
℃
0.010
0
10
20
30
40
50
60
70
80
90
100
0.010
Ta=25
℃
0.001
0
15
30
45
60
75
90
105
120
135
150
VR - Reverse Voltage [V]
Figure 5. MBR10200CTTypical Reverse Current (Per Diode)
1000.000
VR - Reverse Voltage [V]
Figure 6. MBR10100CT Typical Forward Voltage (Per Diode)
10
IR - Reverse Current [uA])
100.000
10.000
Ta= 150
℃
Ta=125
℃
IF - Forward Current [mA]
1
Ta=150
℃
1.000
Ta=75
℃
0.100
Ta=125
℃
Ta=75
0.1
Ta=25
℃
0.010
Ta=25
℃
0.001
0
10
20
30
40
50
60
70
80
90
100
0.01
0
0.2
0.4
0.6
0.8
1
VR - Reverse Voltage [V]
VF - Instantaneous Forward Voltage [V]
Number: DB-027
March 2010 Release, Revision F
Page 2