TAK CHEONG
®
SEM ICON DU CTO R
10A SCHOTTKY BARRIER DIODE
Dual High Voltage Schottky Rectifier
Specification Features:
High Voltage Wide Range Selection, 100V, 150V & 200V
High Switching Speed Device
Low Forward Voltage Drop
Low Power Loss and High Efficiency
Guard Ring for Over-voltage Protection
High Surge Capability
RoHS Compliant
Matte Tin(Sn) Lead Finish
Terminal Leads Surface is Corrosion Resistant
and can withstand to 260°C Wave Soldering or
per MIL-STD-750, Method 2026.
POLARITY CONFIGURATION
L xxyy
Line 2
Line 3
Line 4
1
2
3
TO-220AB
DEVICE MARKING DIAGRAM
L = Tak Cheong Logo
xxyy = Monthly Date Code
Line 2 = MBR
Line 3 = 10xxxCT
Line 4 = Polarity
1. Anode
2. Cathode
3. Anode
MAXIMUM RATINGS
(Per Leg, unless otherwise specified )
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
STG
T
J
Parameter
Maximum Repetitive Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Reverse Voltage
Average Rectified Forward Current
Per Leg
Per Package
Non-repetitive Peak Forward Surge Current
8.3mS Single Phase @ Rated Load
Storage Temperature Range
Operating Junction Temperature
MBR10100CT
100
MBR10150CT
150
MBR10200CT
200
Units
V
5
10
80
-65 to +150
+150
A
A
°C
°C
These ratings are limiting values above which the serviceability of the diode may be impaired.
THERMAL CHARACTERISTIC
Symbol
R
θJC
R
θJA
Parameter
Maximum Thermal Resistance, Junction-to-Case (per leg)
Maximum Thermal Resistance, Junction-to-Ambient (per leg)
Value
1.5
62.5
Units
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(Per Leg)
Symbol
I
R
V
F
Parameter
Reverse Current
Forward Voltage
Test Condition
(Note 1)
T
A
= 25°C unless otherwise noted
MBR10100CT
Min
---
---
0.95
Max
100
0.85
---
1.00
MBR10150CT
Min
---
Max
100
0.92
---
1.25
MBR10200CT
Min
---
Max
100
1.00
V
μA
Units
@ rated V
R
I
F
= 5A
I
F
= 10A
Note/s:
1. Tested under pulse condition of 300
μ
S.
Number: DB-027
March 2010 Release, Revision F
Page 1
MBR10100CT through MBR10200CT
TAK_CHEONG [ Tak Cheong Electronics (Holdings) Co.,Ltd ]
