Power Transistor (PNP)
2SB817E
Electrical Characteristics
(T
Ambient
=25ºC unless noted otherwise)
2SB817E
Symbol
Description
Min.
100
Max.
200
-
-
-
-
2.5
1.5
100
100
0.3
7.0
0.7
V
V
V
V
V
μA
μA
μS
μS
μS
Unit
Conditions
V
CE
=5.0V,
I
C
=1.0A
V
CE
=5.0V,
I
C
=6.0A
I
C
=5.0mA,
I
E
=0
I
C
=5.0mA,
I
B
=0
I
B
=5.0mA,
I
C
=0
I
C
=5.0A,
I
B
=0.5A
I
C
=1.0A,
V
CE
=5.0V
V
CB
=80V,
I
E
=0
V
EB
=4.0V,
I
C
=0
*h
FE
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
*V
CE(sat)
*V
BE(on)
I
CBO
I
EBO
t
on
t
s
t
f
D.C. Current Gain
20
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector-Base Cut-off Current
Emitter-Base Cut-off Current
Turn-on Time
Storage Time
Fall Time
160
140
6.0
-
-
-
-
-
-
V
CC
=20V,
I
C
=1.0A
I
B1
=-
I
B2
=100mA
P
W
=20μS
*Pulse Test: Pulse Width= 300µs, Duty Cycle
≤2.0%
Rev. A/AH 2008-04-16
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